Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Comment on ``The dynamic temperature distributions in stripe geometry lasers''
Journal ArticleDOI
Plasmon-enhanced distributed Bragg reflectors
TL;DR: In this article , the authors explore plasmon-enhanced distributed Bragg reflectors for use in the mid-infrared that exploit the same free-carrier driven reduction in refractive index.
Book ChapterDOI
Pulsed electron beam annealing of ion implanted germanium for photovoltaic devices
TL;DR: In this article, the application of short (50 ns) high energy, pulsed electron beam for shalbw p-n junction formation in implanted Germanium was discussed.
Proceedings ArticleDOI
A dual-MOSFET equivalent resistor thermal sensor
Yongji Jiang,Garrett S. Rose +1 more
TL;DR: The here is to design a thermal sensor which is highly sensitive to the temperature which could be used to drive a management system for regulating on-chip temperature.
Journal ArticleDOI
Modern developments in semiconductor devices
TL;DR: The semiconductor device field is reviewed in this article with the aim of illustrating the main trends in the semiconductor field and the most striking trends are the emergence of silicon as the dominant material and the pressure to refine its technology to an unprecedented extent, mainly as a result of its use in integrated circuits.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
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