Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Collective thermal transport in pure and alloy semiconductors
Pol Torres,Amr M. S. Mohammed,Alvar Torelló,Javier Bafaluy,Juan Camacho,Xavier Cartoixà,Ali Shakouri,F. Xavier Alvarez +7 more
TL;DR: The phonon spectral distribution of the thermal conductivity is studied in the framework of KCM, providing insights to interpret the superdiffusive regime introduced in the truncated Lévy flight framework.
Proceedings ArticleDOI
Measurements and Simulation of Self-Heating in 40 nm SOI MOSFETs
TL;DR: In this article, conventional and trap-rich substrates are used to fabricate 40nm gate length NFET pairs that share the same active region, one NFET serves as a heater, while the other is used as a calibrated thermometer.
Journal ArticleDOI
Two coupled resonant-tunneling-diode oscillators with an air-bridged transmission line for high-power coherent terahertz radiation
TL;DR: In this paper , a two-coupled resonant-tunneling-diode (RTD) terahertz (THz) oscillator with a high output power was developed to fill the THz gap.
Proceedings ArticleDOI
THERMAL CONDUCTIVITY OF InAs/AlSb SUPERLATTICES
TL;DR: In this paper , the thermal conductivities of MBE grown InAs/AlSb superlattices are measured using the 3ω method from 80-300 K. The influence of the growth temperature and post annealing is investigated.
Journal ArticleDOI
Enhanced seebeck coefficient for a compressive n-type polysilicon film
TL;DR: In this paper, an enhanced Seebeck coefficient (S ) for a compressive n-type polysilicon film is proposed, which is attributed to the two ends of the upward polyGOI edge caused by the local oxidation of silicon process.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
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