Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
Measurement of junction temperature of an AlGaAs/GaAs heterojunction bipolar transistor operating at large power densities
Wen-Chau Liu,A. Yuksel +1 more
TL;DR: In this paper, an electrical method to determine the junction temperature of a power bipolar transistor is presented, which does not rely on the constancy of thermal resistance over a wide range of operating temperatures.
Journal ArticleDOI
The best nanoparticle size distribution for minimum thermal conductivity.
Hang Zhang,Austin J. Minnich +1 more
TL;DR: In this article, the authors used optimization methods to show that the best nanoparticle size distribution to scatter the broad thermal phonon spectrum is not a similarly broad distribution but rather several discrete peaks at well-chosen nanoparticle radii.
Proceedings ArticleDOI
Thermal resistance of GaAs field-effect transistors
TL;DR: In this article, an electrical method of measuring the thermal resistance of GaAs FETs is described and an anomaly in thermal resistance discovered at high temperature is explained, Experimental findings are discussed on the theoretical background.
Journal ArticleDOI
Characteristics of laser metalorganic vapor‐phase epitaxy in GaAs
TL;DR: Growth characteristics of a laser metalorganic vapor phase epitaxy (laser MOVPE) and the electrical and optical properties of the epitaxial layer grown by the technique are examined in this paper.
Journal ArticleDOI
Thermal Conductivity and Flash Temperature
TL;DR: In this article, a frequency domain thermmoreflectance (FDTR) method is used to measure the thermal conductivity of a range of tribological materials (AISI 52100 bearing steel, silicon nitride, sapphire, tungsten carbide and zirconia).
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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