Journal ArticleDOI
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
TLDR
In this paper, the thermal conductivities of mixed III-V compounds: indium arsenide-phosphide, gallium-indium arsenides and gallium antimonides are presented.Abstract:
The thermal conductivities as a function of temperature for silicon, germanium, gallium arsenide, indium phosphide, indium arsenide, indium antimonide, gallium phosphide, aluminum antimonide and gallium antimonide are presented. Also included are the thermal conductivities of the mixed III–V compounds: indium arsenide-phosphide, gallium-indium arsenide and gallium arsenide-phosphide. These data are derived from the publications listed in the bibliography and represent the author's selection of the “most probable” values. A brief phenomenological discussion of the mechanisms involved in thermal conduction is presented.read more
Citations
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Journal ArticleDOI
A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors
A. Chryssafis,W. Love +1 more
TL;DR: In this paper, an algorithm is presented which permits the one-dimensional simulation of thermal transients in n - p - n transistors, where band distortion effects, temperature dependent mobilities and thermal conductivity are incorporated into the model.
Journal ArticleDOI
Composite avalanche diode structures for increased power capability
TL;DR: In this paper, the possibility of operating several avalanche oscillator wafers in parallel to obtain higher power and/or higher efficiency was explored analytically and experimentally, and it was shown that over a wide range the efficiency is roughly proportional to the power density in the semiconductor.
Journal ArticleDOI
Recent progress in the development of type II interband cascade lasers
J.L. Bradshaw,Nicholas Breznay,John D. Bruno,J.M. Gomes,J. T. Pham,Frederick J. Towner,D.E. Wortman,Richard L. Tober,C. J. Monroy,Kim Olver +9 more
TL;DR: In this paper, the authors proposed a type-II interband cascade laser design, which combines the advantage of an interband optical transition with interband tunneling to enable the cascading of type II quantum well active regions as is done in type-I quantum cascade laser.
Proceedings ArticleDOI
Modeling of MMIC devices for determining MMIC channel temperatures during life tests
TL;DR: In this article, several analytical techniques were examined for predicting GaAs MMIC junction temperatures to support reliability life tests, including series solution, finite difference, finite element, and boundary element methods.
Journal ArticleDOI
Time-dependent carrier flow in a transistor structure under nonisothermal conditions
TL;DR: In this article, a time-dependent temperature-dependent two-dimensional model has been developed to illustrate the internal behavior of bipolar transistors, where electrothermal interactions within the device are calculated in an attempt to better understand thermal instability modes.
References
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Journal Article
Thermal Conductivity of Silicon from 300 to 1400°K^*
TL;DR: The thermal diffusivity of pure silicon has been measured from 300 to 1400 degrees K and the specific heat of the same material over the same temperature range was measured by Dennison.
Journal ArticleDOI
Thermal Conductivity: XIV, Conductivity of Multicomponent Systems
TL;DR: In this article, the thermal conductivity of a number of multi-component systems has been determined as a function of composition and temperature, and it was shown that a second component in solid solution markedly lowers thermal conductivities.
Journal ArticleDOI
Thermal Conductivity of GaAs and GaAs1−xPx Laser Semiconductors
TL;DR: In this article, thermal conductivity measurements for both pure and heavily doped n− and p−type GaAs single crystals were reported for the range 3° to 300°K, with a K less than 1/20 that of pure GaAs at 77°K.
Journal ArticleDOI
Thermal Conductivity and Thermoelectric Power of Germanium‐Silicon Alloys
M. C. Steele,F. D. Rosi +1 more
TL;DR: In this paper, a series of germanium-silicon alloys were used for thermoelectric power measurement and it was shown that solid-solution alloying can significantly increase the figure of merit of the thermodynamic properties of these materials.
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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
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