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Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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TLDR
In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Conduction cooling for an LSI package: a one-dimensional approach
TL;DR: Oktay and Kammerer as mentioned in this paper discussed an innovative conduction-cooling approach using He gas encapsulation which has been developed in response to the new LSI technology requirements, and the basic challenges encountered in building a thermal bridge from individual chips to the module and cold plate are described.
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Accurate determination of thermal resistance of FETs
TL;DR: In this article, an accurate closed-form expression for the thermal resistance of multifinger FET structures is presented based on the solution of Laplace's equations in prolate spheroidal coordinates and elliptical cylinder coordinates, which is verified by comparing the results with finite-element simulations, and experimental observations from liquid-crystal measurements and spatially resolved photoluminescence measurements.
Journal ArticleDOI
On the modeling of the transient thermal behavior of semiconductor devices
TL;DR: In this paper, a mathematical model of the transient temperature response of integrated devices is presented which takes into account the three-dimensional (3-D) nature of heat flow and the physical structure of the device.
Journal ArticleDOI
A critical review of thermal models for electro-thermal simulation
TL;DR: In this paper, the authors discuss some limitations in the approaches commonly adopted for device and circuit electro-thermal simulation and propose a new approach for calculating the temperature distribution under both steady-state and transient conditions.
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A Review on Applications of Capacitive Displacement Sensing for Capacitive Proximity Sensor
TL;DR: It is shown that both the detection range and accuracy of CPS can be improved by multi-sensor fusion, and the application scenarios can be extensive through machine/deep learning approaches.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
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Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
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Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.