Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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TLDR
In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Electrical-thermal modeling and simulation for three-dimensional integrated systems
Parameter extraction for electro-thermal modeling of bipolar transistors
F. Tamigi,Slobodan Mijalković,Lis K. Nanver,N. Nenadovic,Hugo Schellevis,Vincenzo d'Alessandro,Niccolò Rinaldi,Joachim N. Burghartz +7 more
Journal ArticleDOI
A physically based thermal model for high-voltage thin-film SOI LDMOS in short circuit operation
TL;DR: In this article, the heat generation process inside thin-film silicon-on-insulator LDMOS structures accounting for Linear Doping Profile (LDP) or Variation on Lateral Doping (VLD) is analyzed by means of numerical simulation tools and analytical modeling.
Proceedings ArticleDOI
Extraction of thermal parameters for bipolar circuit simulation
TL;DR: A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating, at high currents where simple models fail.
Journal ArticleDOI
Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements
TL;DR: Self-heating of silicon resistors which are used as passive devices in analog circuits and as ESD-Protection elements is characterised in this work by purely DC measurements and a methodology using the device simultaneously as heater and temperature sensor is presented.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
Journal ArticleDOI
Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
Journal ArticleDOI
Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.