Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Proceedings ArticleDOI
Safe operating area - a new frontier in Ldmos design
TL;DR: In this article, the boundaries that determine the Ldmos safe operating area are described and are shown to be predominantly thermal or electrical in origin, and the impact on device size and related trade-offs with breakdown voltage and specific on-resistance are discussed, as are possibilities for improving SOA performance.
Journal ArticleDOI
The effects of BJT self-heating on circuit behavior
TL;DR: In this article, the effects of self-heating on bipolar junction transistor (BJT) circuit behavior were investigated, and it was shown that errors in output admission and reverse transadmittance can be significant without much power dissipation, especially when the base and emitter driving impedances are small.
Journal ArticleDOI
Thermal design and simulation of bipolar integrated circuits
K. Poulton,K.L. Knudesn,John J. Corcoran,K.C. Wang,R.L. Pierson,R.B. Nubling,Mau-Chung Frank Chang +6 more
TL;DR: In this article, a thermal simulation tool called ThCalc was created to calculate the temperature profile of an IC and run fast enough to allow calculations on a whole chip, which was used to redesign the S/H IC to reduce the largest temperature rise by a factor of 2.7 with a minimal impact on circuit size.
Journal ArticleDOI
Equivalent circuit modeling of static substrate thermal coupling using VCVS representation
TL;DR: In this paper, a thermal equivalent circuit with resistors and voltage-controlled voltage sources is proposed to represent the thermal coupling between active devices in a circuit simulation environment, which allows exact representation of substrate thermal coupling at any number of evaluation points.
Journal ArticleDOI
Thermal analysis of integrated circuit devices and packages
TL;DR: In this article, an analytical solution for the temperature at any location inside and on the boundaries of a four-layer structure is derived using the separation of variables, and several representative device structures were analyzed.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
Journal ArticleDOI
Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
Journal ArticleDOI
Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.