Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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TLDR
In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Cooling of electronic system: From electronic chips to data centers
TL;DR: In this article, the authors present a table of contents for the dissertation of figures and a list of attributes for each of them, including the most important ones.
Proceedings ArticleDOI
Time domain identification of passive multiport RC networks with convex optimization: An application to thermal impedance macromodeling
TL;DR: A novel time-domain identification procedure for passive RC multiport networks is introduced, based on convex optimization and allowing the straightforward enforcement of basic physical constraints, specifically tailored to thermal impedances.
Journal ArticleDOI
Implementation of a scalable VBIC model for SiGe:C HBTs
TL;DR: In this article, the utility of semi-physical vertical bipolar inter-company (VBIC) model for the first time to develop for an accurate, easy and fast scaling methodology for high-frequency SiGe:C heterojunction bipolar transistors (HBTs) with a peak f T of 75 GHz fabricated in a low-cost BiCMOS technology was examined.
Journal ArticleDOI
Simulation of thermal effects in integrated circuits with SPICE - a behavioural model approach
TL;DR: In this article, an approach to the simulation of thermal effects in integrated circuits with SPICE by using an analog behavioural modelling concept is presented. Butler et al. present macro models for BJTs, diodes and resistors, which consider the influence of self-heating, interaction thermals, as well as the nonlinear thermal conductivity of silicon on the circuit's behaviour.
Proceedings ArticleDOI
METS: A Metric for Electro-Thermal Sensitivity, and Its Application To FinFETs
Brian Swahn,Soha Hassoun +1 more
TL;DR: It is shown that the proposed metric, METS, is capable of characterizing the self-heating behavior of FinFETs in the on and off states, and is demonstrated the effectiveness of METS in characterizing FinFets, novel double-gate devices promising to replace traditional MOSfETs because of their reduced leakage currents.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
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Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
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Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.