Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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TLDR
In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Journal ArticleDOI
Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded In/sub x/Ga/sub 1-x/P metamorphic buffer
TL;DR: In this article, the thermal properties of metamorphic InP-InGaAs heterojunction bipolar transistors (HBTs) on GaAs substrates using a linearly graded InGaP buffer have been investigated.
Proceedings Article
Silicon Germanium heterojunction bipolar transistor ESD power clamps and the Johnson Limit
TL;DR: In this paper, a SiGe-based ESD power clamp was constructed using epitaxial base pseudomorphic Silicon Germanium heterojunction transistors in a common collector Darlington configuration.
Proceedings ArticleDOI
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
Steven H. Voldman,P. Juliano,R. Johnson,Nicholas Theodore Schmidt,Alvin J. Joseph,S. Furkay,Elyse Rosenbaum,J. Dunn,David L. Harame,Bernard S. Meyerson +9 more
TL;DR: In this article, the authors investigated high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT).
Journal ArticleDOI
Scalable small-signal model for BJT self-heating
Robert Fox,Sang-Gug Lee +1 more
TL;DR: In this article, the effects of self-heating on BJT behavior are demonstrated through measurement and simulation through a frequency-domain solution to the heat-flow equation, which applies to any rectangular emitter geometry.
Journal ArticleDOI
A 3D thermal simulation tool for integrated devices-Atar
Tom J. Smy,D.J. Walkey,S.K. Dew +2 more
TL;DR: A novel three-dimensional (3D) thermal simulation tool for semiconductor integrated devices is presented and it is confirmed that the simulator produces an accurate solution to the nonlinear differential equation describing the heat flow.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
Journal ArticleDOI
Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
Journal ArticleDOI
Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.