Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Characterisation of Self-Heating in SiGe:C HBTs and InP HBTs
TL;DR: In this paper, Dapprima si introdurra largomento dal punto di vista fisico; in seguito, si parlera dellimportanza delle misure pulsate e della resistenza termica nella caratterizzazione dei fenomeni termici, presentando i componenti che sono oggetto dello studio.
Proceedings ArticleDOI
Predictive microwave device design by coupled electro-thermal simulation based on a fully physical thermal model
T. Batty,C.E. Christoffersen,S. David,A.J. Panks,R.G. Johnson,Christopher M. Snowden,I.B. Steer +6 more
TL;DR: In this paper, coupled electro-thermal simulations are performed to demonstrate predictive design of microwave devices based on an original, fully physical, thermal impedance matrix approach, capable of describing 'nearly exactly' time-dependent heat flow in complex 3-dimensional systems, whilst requiring no model reduction for electrothermal CAD.
Journal ArticleDOI
Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson limit in RF bicmos SiGe technology
TL;DR: In this paper, the authors used the Johnson limit of the transistor as a means to provide an ESD power clamp by utilizing a first low breakdown trigger device and a second high breakdown clamp device.
Proceedings ArticleDOI
Utilizing infrared for improved FET channel temperature prediction
TL;DR: In this article, the authors presented a model for the channel temperature prediction based on IR techniques by reversing the spatial averaging inherent in IR microscopy, which is the simplest technique for temperature measurement is Infrared (IR) microscopy.
Characterization and AlN cooling of thermally isolated bipolar transistors
TL;DR: In this article, the thermal management of bipolar ICs by improving the understanding, and associated modeling, of electrothermal effects and by investigating the potential cooling of the devices and circuits with aluminum nitride (AlN) heatspreaders has been investigated.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
Journal ArticleDOI
Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
Journal ArticleDOI
Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.