Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
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TLDR
In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.Abstract:
Recent predictions that thermal effects will limit future transistor speed improvement motivated an interest in predicting and measuring these effects. A mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation. At any point within the device, the model predicts the time-dependent temperature response to a change in power dissipation. A new method of measuring the local time-dependent thermal behavior of small bipolar transistors is described and used to verify the model. It was found that the thermal spreading resistance becomes important in silicon transistors when the emitter stripe dimensions approach 1 µ. Furthermore, the thermal response is much slower than the electrical response. Also, it was confirmed that adjacent devices in integrated circuits are essentially thermally isolated as far as thermal spreading resistance is concerned.read more
Citations
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Journal ArticleDOI
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development
Aakashdeep Gupta,K Nidhin,Suresh Balanethiram,Shon Yadav,Anjan Chakravorty,Sebastien Fregonese,Thomas Zimmer +6 more
TL;DR: In this article, the authors proposed a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon-based multifinger bipolar transistor structure, which takes as inputs the dimensions of emitter fingers, shallow and deep trench isolations, their relative locations and the temperature dependent material thermal conductivity.
Journal ArticleDOI
Spatial and Temporal Resolution of Conjugate Conduction-Convection Thermal Resistance
Jinny Rhee,A.D. Bhatt +1 more
TL;DR: In this article, a transient 3D solution to the heat conduction equation with a small square heat source on an adiabatic surface and Newtonian convection on the opposite side was obtained using Green's functions.
Journal ArticleDOI
Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations
TL;DR: In this article, the authors provide a comprehensive analysis of thermal resistance of isolated bipolar transistors on SOI substrates based on 3D electro-thermal simulations calibrated to experimental data.
Journal ArticleDOI
Extraction of True Finger Temperature From Measured Data in Multifinger Bipolar Transistors
Aakashdeep Gupta,K Nidhin,Suresh Balanethiram,Rosario D'Esposito,Sebastien Fregonese,Thomas Zimmer,Anjan Chakravorty +6 more
TL;DR: In this paper, a step-by-step approach was proposed to estimate the finger temperature in a silicon-based multifinger bipolar transistor structure from conventional measurements, where the superposition of raw measured data at around 40 mW power underestimates the true finger temperature by around 10% due to the linearity of the heat diffusion equation.
Book ChapterDOI
Thermal Analysis of Integrated Circuits
H. Rudolph,D. Seitzer +1 more
TL;DR: In this paper, the thermal analysis of bipolar integrated circuits within the design phase is described, and the influence of self-heating and interaction thermals was simulated with special SPICE subcircuits.
References
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Journal ArticleDOI
The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K
TL;DR: The thermal conductivity of single crystals of pure n-type germanium and of p-type Germanium containing from 10$ 14$ to 10$ 19$ group III impurity atoms per cm$^{3}$ has been measured from 2 to 90 degrees K in some cases the readings have been extended up to room temperature as discussed by the authors.
Journal ArticleDOI
Physical problems and limits in computer logic
TL;DR: This article examines physical problems and limits of logical circuitry at increasingly higher current densities, and offers the most directly effective solution to the dilemma-lower operating temperature.
Journal ArticleDOI
Low-temperature operation of Ge picosecond logic circuits
TL;DR: In this article, the results of a study of the design factors and performance of germanium circuits at low temperatures are described, with comparisons to silicon circuits, and the effect of temperature on circuit propagation delay is emphasized.
Journal ArticleDOI
Picosecond Integrated Circuits in Germanium and Silicon
F.H. Dill,A.S. Farber,H.N. Yu +2 more
TL;DR: Calculations based upon material properties indicate a considerable advantage to germanium over silicon for high-speed logic-switching applications, due largely to the better electron and hole mobilities for germanum.