Journal ArticleDOI
Tin Oxide Thin Film Transistors
Akira Aoki,Hiroshi Sasakura +1 more
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This article is published in Japanese Journal of Applied Physics.The article was published on 1970-05-01. It has received 117 citations till now. The article focuses on the topics: Tin oxide & Equivalent oxide thickness.read more
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Journal ArticleDOI
Metal oxides for optoelectronic applications
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Patent
Combined binary oxide semiconductor device
TL;DR: In this paper, a semiconductor device can include a channel including a first binary oxide and a second binary oxide, and the channel can be split into two binary oxide channels, each having a different voltage.
Journal ArticleDOI
Tin Oxide Nanowires, Nanoribbons, and Nanotubes
TL;DR: In this paper, the orientation relationship between the orthorhombic superlattice and the rutile structured SnO2 was determined to be [001]o || [102]t and (100)o'||'(010)t for the nanowires and sandwiched nanoribbons.