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Journal ArticleDOI

Tunable ferromagnetism by oxygen vacancies in Fe-doped In2O3 magnetic semiconductor

P. F. Xing, +5 more
- 25 Aug 2009 - 
- Vol. 106, Iss: 4, pp 043909
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TLDR
In this article, a modified model of F-center mediated ferromagnetism was proposed to explain the nonmonotonic dependence of ferromagnetic properties on oxygen pressure.
Abstract
Fe-doped In2O3 films with well defined bcc (440) texture were grown on r-cut sapphire at different oxygen pressures by pulsed laser deposition Nonmonotonic dependence of ferromagnetism on oxygen pressure has been observed Under optimal deposition conditions, the saturation magnetization can reach 25μB/Fe atom Moreover, the ferromagnetism can be reversed between the higher magnetization state and the lower magnetization state by alternate annealing in vacuum and in air All these features are well explained by a modified model of F-center mediated ferromagnetism

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Citations
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Journal ArticleDOI

Electronic defects in In2O3 and In2O3:Mg thin films on r-plane sapphire

TL;DR: The electrical and structural properties of undoped and Mg-doped pulsed-laser-deposited In2O3 thin films grown on rplane sapphire were investigated by means of Hall-effect, X-ray diffraction, and space-charge spectroscopic methods, such as thermal admittance spectroscopy and deep-level transient spectroscope as discussed by the authors.
Journal ArticleDOI

Experimental and theoretical assessment of Fe-doped indium-oxide-based dilute magnetic semiconductors

TL;DR: In this paper, iron-doped indium oxide (In1-xFex)2O3 was amalgamated through a traditional solid-state reaction method followed by H2/air sintering.
Journal ArticleDOI

Study of the Hydrogenation and Re-heating of Co-doped In 2 O 3 based Diluted Magnetic Semiconductors

TL;DR: In this paper, the Co2+ ions doping effect on the magnetic behavior of In2O3 nanoparticles has been discussed, and the results showed that the prepared Co doped In 2O3 sample had achieved overlapped paramagnetic (PM) properties defeating the diamagnetic (DM) properties of the In0.94Co 0.06O sample.
Journal ArticleDOI

Room temperature ferromagnetism in Gd-doped In 2 O 3 nanoparticles obtained by auto-combustion method

TL;DR: In this article, a single-phase cubic bixbyite In2O3 nanoparticles were obtained by auto-combustion and the 3+ valence state of In and Gd was confirmed from XPS and XAS techniques.
Journal ArticleDOI

A Metal Oxide Heterostructure for Resistive Random Access Memory Devices

TL;DR: In this article, a metal oxide heterostructure (MOH) based resistive switching (RS) device is proposed and investigated, which is more directly related to oxygen ion/vacancy migration around their interface.
References
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Journal ArticleDOI

Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI

Donor impurity band exchange in dilute ferromagnetic oxides.

TL;DR: It is proposed thatferromagnetic exchange here, and in dilute ferromagnetic nitrides, is mediated by shallow donor electrons that form bound magnetic polarons, which overlap to create a spin-split impurity band.
Journal ArticleDOI

Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

TL;DR: The observation of transparent ferromagnetism in cobalt-doped anatase thin films with the concentration of cobalt between 0 and 8% is reported, indicating the existence of ferromagnetic long-range ordering.
Journal ArticleDOI

Magnetic and electric properties of transition-metal-doped ZnO films

TL;DR: In this article, a 3d transition metal-doped ZnO films (n-type Zn1−xMxO) were formed on sapphire substrates using a pulsed-laser deposition technique, and their magnetic and electric properties were examined.
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