Journal ArticleDOI
Vertically integrated silicon-germanium nanowire field-effect transistor
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In this article, the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field effect transistors (FETs) was demonstrated and a threshold voltage close to 3.9 V was reported.Abstract:
We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field-effect transistors (FETs). We report a threshold voltage close to 3.9 V, an ION/IOFF ratio of 104. The subthreshold slope was estimated to be around 0.9 V/decade and explained by a high traps density at the nanowire core/oxide shell interface with an estimated density of interface traps Dit ∼ 1.2 × 1013 cm−2 eV−1. Comparisons are made with both vertical Si and horizontal SiGe FETs performances.read more
Citations
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Journal ArticleDOI
Silicon-germanium nanowires: chemistry and physics in play, from basic principles to advanced applications.
TL;DR: Basic Principles to Advanced Applications Michele Amato,*, Maurizia Palummo,*,‡ Riccardo Rurali,* and Stefano Ossicini.
Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide
Nanowires Han,Yu Sheng Zhou,Yan Zhang,Cheng-Ying Chen,Long Lin,Xue Wang,Sihong Wang,Zhong Lin Wang +7 more
TL;DR: In this article, a strain-gated piezotronic transistors were fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquidsolid process.
Journal ArticleDOI
Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor
TL;DR: These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.
Journal ArticleDOI
Nanomechanical gas sensing with nonlinear resonant cantilevers.
TL;DR: In the nonlinearly driven cantilever, the adsorption and desorption-induced frequency shifts were enhanced by over a factor of three compared to resonant sensing with the same mode in the linear regime, demonstrating a route towards gas detectors that exploit nonlinearity to enhance the responsivity.
Journal ArticleDOI
Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars.
Suman Nandy,Gonçalo Gonçalves,Joana V. Pinto,Tito Busani,V. Figueiredo,Luís Pereira,Rodrigo Martins,Elvira Fortunato +7 more
TL;DR: It is shown that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.
References
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Book
Applications of Silicon-Germanium Heterostructure Devices
C. K. Maiti,G.A Armstrong +1 more
TL;DR: In this paper, the first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way.
Journal ArticleDOI
Fully Depleted Nanowire Field‐Effect Transistor in Inversion Mode
Oliver Hayden,Mikael Björk,Heinz Schmid,Heike Riel,Ute Drechsler,Siegfried Karg,Emanuel Lörtscher,Walter Riess +7 more
Journal ArticleDOI
High-performance silicon nanowire field-effect transistor with silicided contacts
TL;DR: In this article, a field effect transistor (FET) with a back-gate configuration has been fabricated and characterized, where a Si3N4 layer was used as gate insulator and a p++ silicon substrate as a back gate, with a good hole mobility of around 200 cm2 V−1 s−1.
Journal ArticleDOI
Oxidation of silicon nanowires for top-gated field effect transistors
Bangzhi Liu,Yanfeng Wang,Tsung Ta Ho,Kok Keong Lew,Sarah M. Eichfeld,Joan M. Redwing,Theresa S. Mayer,Suzanne E. Mohney +7 more
TL;DR: In this paper, the authors investigated the thermal oxidation of as-grown silicon nanowires with diameters ranging from 20 to 400nm at 700 and 900°C with or without the addition of a chlorinated gas source.
Journal ArticleDOI
Fabrication of Si1−xGex alloy nanowire field-effect transistors
Cheol-Joo Kim,Jee-Eun Yang,Hyunseung Lee,Hyun M. Jang,Moon-Ho Jo,Won-Hwa Park,Zee Hwan Kim,Sunglyul Maeng +7 more
TL;DR: In this article, single-crystalline Si1−xGex alloy nanowires were grown by a Au catalyst-assisted chemical vapor synthesis using SiH4 and GeH4 precursors, and the alloy composition was reproducibly controlled in the whole composition range by controlling the kinetics of catalytic decomposition.