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Consequently, their design is important for a good thermal behavior and reliability of the transistors.
For 64-bit addition, our proposed CSL requires 44% fewer transistors than the conventional one.
We propose new side-gate transistors.
Preliminary results indicate that the addition of Ge to the base of these transistors did not degrade the long-term device reliability.
Journal ArticleDOI
D. Frank, M. Brady, A. Davidson 
41 Citations
This three-terminal device is expected to have characteristics very similar to those of bipolar transistors, but at millivolt operating levels.
And the new design also requires much fewer transistors than previous designs.
It reveals the possible activation change of the bipolar transistors.
Results show that the power to failure of the two transistors depend on the number of slots, pulse thermal resistance, thermal capacitance, and breakdown temperature, although these transistors exhibit nearly similar structures.
Single Electron Transistors have the potential to be a very promising candidate for future computing architectures due to their low voltage operation and low power consumption.
These results are especially important for new generations of power switching transistors.
Proceedings ArticleDOI
23 May 2000
50 Citations
In addition, SETs have two unique features that conventional transistors do not have: multi-gate capability and conductance that oscillates as a function of gate voltage.
In addition, SETs have two unique features that conventional transistors do not have.
This method is useful for finding the best possible transistor pairs, including nondual transistors.
These results exhibit the promising potential of our transistors in artificial intelligence and healthcare systems.
The results show the possibility of fabricating transistors with a very thin, highly doped base.
Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.
Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods.