K
Kai Zhao
Researcher at IBM
Publications - 27
Citations - 615
Kai Zhao is an academic researcher from IBM. The author has contributed to research in topics: Metal gate & Dielectric. The author has an hindex of 12, co-authored 27 publications receiving 526 citations. Previous affiliations of Kai Zhao include GlobalFoundries.
Papers
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Proceedings ArticleDOI
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
C-H. Lin,Brian J. Greene,Shreesh Narasimha,J. Cai,A. Bryant,Carl J. Radens,Vijay Narayanan,Barry Linder,Herbert L. Ho,A. Aiyar,E. Alptekin,J-J. An,Michael V. Aquilino,Ruqiang Bao,V. Basker,Nicolas Breil,MaryJane Brodsky,William Y. Chang,Clevenger Leigh Anne H,Dureseti Chidambarrao,Cathryn Christiansen,D. Conklin,C. DeWan,H. Dong,L. Economikos,Bernard A. Engel,Sunfei Fang,D. Ferrer,A. Friedman,Allen H. Gabor,Fernando Guarin,Ximeng Guan,M. Hasanuzzaman,J. Hong,D. Hoyos,Basanth Jagannathan,S. Jain,S.-J. Jeng,J. Johnson,B. Kannan,Y. Ke,Babar A. Khan,Byeong Y. Kim,Siyuranga O. Koswatta,Amit Kumar,T. Kwon,Unoh Kwon,L. Lanzerotti,H-K Lee,W-H. Lee,A. Levesque,Wai-kin Li,Zhengwen Li,Wei Liu,S. Mahajan,Kevin McStay,Hasan M. Nayfeh,W. Nicoll,G. Northrop,A. Ogino,Chengwen Pei,S. Polvino,Ravikumar Ramachandran,Z. Ren,Robert R. Robison,Saraf Iqbal Rashid,Viraj Y. Sardesai,S. Saudari,Dominic J. Schepis,Christopher D. Sheraw,Shariq Siddiqui,Liyang Song,Kenneth J. Stein,C. Tran,Henry K. Utomo,Reinaldo A. Vega,Geng Wang,Han Wang,W. Wang,X. Wang,D. Wehelle-Gamage,E. Woodard,Yongan Xu,Y. Yang,N. Zhan,Kai Zhao,C. Zhu,K. Boyd,E. Engbrecht,K. Henson,E. Kaste,Siddarth A. Krishnan,Edward P. Maciejewski,Huiling Shang,Noah Zamdmer,R. Divakaruni,J. Rice,Scott R. Stiffler,Paul D. Agnello +98 more
TL;DR: In this article, the authors present a fully integrated 14nm CMOS technology featuring fin-FET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs.
Proceedings ArticleDOI
Fundamental aspects of HfO 2 -based high-k metal gate stack reliability and implications on t inv -scaling
Eduard A. Cartier,Andreas Kerber,Takashi Ando,Martin M. Frank,Kisik Choi,Siddarth A. Krishnan,Barry Linder,Kai Zhao,Frederic Monsieur,James H. Stathis,Vijay Narayanan +10 more
TL;DR: In this paper, a case is made that these observed trends arise from the layer structure and the materials properties of the SiO(N)/HfO 2 dual dielectric.
Proceedings ArticleDOI
A 7nm CMOS technology platform for mobile and high performance compute application
Shreesh Narasimha,Basanth Jagannathan,A. Ogino,Jaeger Daniel,B. Greene,Christopher D. Sheraw,Kai Zhao,Balasubramanian S. Haran,Unoh Kwon,A. K. M. Mahalingam,B. Kannan,B. Morganfeld,Jessica Dechene,Carl J. Radens,Amanda L. Tessier,A. Hassan,H. Narisetty,I. Ahsan,M. Aminpur,C. An,Michael V. Aquilino,Ankur Arya,Rod Augur,N. Baliga,R. Bhelkar,G. Biery,A. Blauberg,Natalia Borjemscaia,Andres Bryant,Linjun Cao,V. Chauhan,M. Chen,L. Cheng,J. Choo,Cathryn Christiansen,Tao Chu,B. Cohen,R. Coleman,D. Conklin,S. Crown,A. da Silva,Daniel J. Dechene,Garo Jacques Derderian,Sadanand V. Deshpande,Gabriela Dilliway,Keith Donegan,Manfred Eller,Y. Fan,Q. Fang,A. Gassaria,R. Gauthier,Ghosh Somnath,G. Gifford,T. Gordon,M. Gribelyuk,G. Han,J.H. Han,K. Han,M. Hasan,Jack M. Higman,Judson R. Holt,L. Hu,L. Huang,C. Huang,Ting-Hsiang Hung,Y. Jin,Jeyaraj Antony Johnson,Scott C. Johnson,Vivek Joshi,Manoj Joshi,Patrick Justison,S. Kalaga,Tony Tae-Hyoung Kim,W. Kim,Rishikesh Krishnan,Bharat Krishnan,K. Anil,Mahender Kumar,Jae Gon Lee,Rinus T. P. Lee,J. Lemon,S.L. Liew,P. Lindo,M. Lingalugari,M. Lipinski,P. Liu,Jinping Liu,S. Lucarini,W. Ma,E. Maciejewski,S. Madisetti,Arkadiusz Malinowski,Mehta Jaladhi,C. Meng,Souvick Mitra,Christa Montgomery,Hasan M. Nayfeh,T. Nigam,G. Northrop,Katsunori Onishi,Christopher Ordonio,M. Ozbek,Rohit Pal,Sanjay Parihar,O. Patterson,Eswar Ramanathan,I. Ramirez,Rakesh Ranjan,Jeric Sarad,V. Sardesai,S. Saudari,C. Schiller,B. Senapati,C. Serrau,N. Shah,Tian Shen,Haifeng Sheng,Joseph F. Shepard,Y. Shi,Mary Claire Silvestre,Dhruv Singh,Z. Song,J. Sporre,Purushothaman Srinivasan,Z. Sun,Akil K. Sutton,R. Sweeney,Tabakman Keith,M. Tan,Xin Wang,E. Woodard,G. Xu,D. Xu,T. Xuan,Y. Yan,J. Yang,Kong Boon Yeap,M. Yu,A. Zainuddin,Jia Zeng,Kan Zhang,M. Zhao,Y. Zhong,Rick Carter,C-H. Lin,Stephan Grunow,Craig Child,M. Lagus,Robert Fox,E. Kaste,G. Gomba,Srikanth Samavedam,P. Agnello,D. K. Sohn +153 more
TL;DR: A fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization, designed to enable both High Performance Compute (HPC) and mobile applications.
Proceedings ArticleDOI
PBTI under dynamic stress: From a single defect point of view
TL;DR: In this article, a simple physical model was introduced which describes the behavior of a distribution of identical defects (characterized by τ c and τ e ) but provides deep insights into the BTI dynamics under AC stress in general.
Proceedings ArticleDOI
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
Jingyun Zhang,Shanti Pancharatnam,C. Adams,Heng Wu,Huimei Zhou,Tian Shen,Ruilong Xie,Muthumanickam Sankarapandian,Junli Wang,Koji Watanabe,Ruqiang Bao,Frougier Julien,X.-H. Liu,Chanro Park,Hosadurga Shobha,Praveen Joseph,Dexin Kong,A. Arceo De La Pena,James Chingwei Li,Richard A. Conti,Daniel J. Dechene,Nicolas Loubet,Andrew M. Greene,Robin Chao,Tenko Yamashita,Robert R. Robison,V. Basker,Kai Zhao,Dechao Guo,Balasubramanian S. Pranatharthi Haran,R. Divakaruni,Huiming Bu,Xin Miao,Lan Yu,Reinaldo A. Vega,Pietro Montanini,Curtis Durfee,A. Gaul +37 more
TL;DR: In this article, the full bottom dielectric isolation (BDI) is first demonstrated on horizontally stacked Nanosheet device structures with Lmetal 12 nm and the comparison of full BDI scheme vs punch through stopper (PTS) scheme has been systematically studied.