S
Souvik Mahapatra
Researcher at Indian Institute of Technology Bombay
Publications - 242
Citations - 6126
Souvik Mahapatra is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Negative-bias temperature instability & Gate oxide. The author has an hindex of 35, co-authored 228 publications receiving 5472 citations. Previous affiliations of Souvik Mahapatra include Indian Institutes of Technology & Alcatel-Lucent.
Papers
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A comprehensive model of PMOS NBTI degradation
TL;DR: A comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model is constructed and it is demonstrated how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work.
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A comprehensive model for PMOS NBTI degradation: Recent progress.
TL;DR: By reformulating the Reaction–Diffusion model in a particularly simple form, it is shown that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism.
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A Comparative Study of Different Physics-Based NBTI Models
Souvik Mahapatra,Nilesh Goel,Sujay B. Desai,Shashank Gupta,B. Jose,Subhadeep Mukhopadhyay,K. Joshi,Ankit Jain,Ahmad E. Islam,Muhammad A. Alam +9 more
TL;DR: In this article, different physics-based negative bias temperature instability (NBTI) models as proposed in the literature are reviewed, and the predictive capability of these models is benchmarked against experimental data.
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Critical Role of Interlayer in Hf 0.5 Zr 0.5 O 2 Ferroelectric FET Nonvolatile Memory Performance
Kai Ni,Pankaj Sharma,Jianchi Zhang,Matthew Jerry,Jeffery A. Smith,Kandabara Tapily,Robert D. Clark,Souvik Mahapatra,Suman Datta +8 more
TL;DR: In this paper, the critical design criteria of Hf0.5Zr 0.5O2 (HZO)-based ferroelectric field effect transistor (FeFET) for nonvolatile memory application were established.
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Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation
TL;DR: In this paper, a theoretical analysis of negative bias temperature instability (NBTI) over many decades in timescale is presented, where the authors explore the mechanics of time transients of NBTI over many orders of magnitude in time.