Journal ArticleDOI
A comprehensive model for PMOS NBTI degradation: Recent progress.
TLDR
By reformulating the Reaction–Diffusion model in a particularly simple form, it is shown that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism.About:
This article is published in Microelectronics Reliability.The article was published on 2007-06-01. It has received 282 citations till now. The article focuses on the topics: Negative-bias temperature instability.read more
Citations
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Journal ArticleDOI
Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation
TL;DR: In this paper, a theoretical analysis of negative bias temperature instability (NBTI) over many decades in timescale is presented, where the authors explore the mechanics of time transients of NBTI over many orders of magnitude in time.
Proceedings ArticleDOI
The Universality of NBTI Relaxation and its Implications for Modeling and Characterization
TL;DR: In this article, the authors argue that understanding the nature of the relaxation phase could hold the key to unraveling the underlying NBTI mechanism, and demonstrate the valuable consequences resulting therefrom.
Journal ArticleDOI
Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation
TL;DR: In this paper, the most important intrinsic wearout mechanisms of MOSFETs (including hot-carrier injection, time-dependent dielectric breakdown, and negative bias temperature instability) are reviewed and a new SPICE reliability simulation approach is proposed and demonstrated with a simplified SRAM design on a commercial 90nm technology.
Journal ArticleDOI
Reliability- and process-variation aware design of integrated circuits.
TL;DR: A broad review the literature for Reliability- and Process-variation aware VLSI design shows a re-emergence of the topic as a core area of active research and is likely to be a part of any reliability qualification protocol for future technology generations.
Journal ArticleDOI
A critical review of recent progress on negative capacitance field-effect transistors
TL;DR: A critical review of recent progress on negative capacitance field effect transistor (NC-FET) research and some starting points for a coherent discussion can be found in this paper, where the validity of quasi-static NC and the frequency-reliability limits of NC are discussed.
References
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Journal ArticleDOI
Anomalous transit-time dispersion in amorphous solids
Harvey Scher,Elliott W. Montroll +1 more
TL;DR: In this paper, the authors developed a stochastic transport model for the transient photocurrent, which describes the dynamics of a carrier packet executing a time-dependent random walk in the presence of a field-dependent spatial bias and an absorbing barrier at the sample surface.
Journal ArticleDOI
A reliable approach to charge-pumping measurements in MOS transistors
TL;DR: In this article, a new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented.
Journal ArticleDOI
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
TL;DR: The negative bias temperature instability (NBTI) commonly observed in p-channel metaloxide-semiconductor field effect transistors when stressed with negative gate voltages at elevated temperatures is discussed in this article.
Journal ArticleDOI
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
Journal ArticleDOI
A comprehensive model of PMOS NBTI degradation
TL;DR: A comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model is constructed and it is demonstrated how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work.
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Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
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