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Tetsu Tanaka

Researcher at Tohoku University

Publications -  423
Citations -  11239

Tetsu Tanaka is an academic researcher from Tohoku University. The author has contributed to research in topics: Wafer & Chip. The author has an hindex of 38, co-authored 406 publications receiving 10375 citations. Previous affiliations of Tetsu Tanaka include NTT DoCoMo & Tokyo Medical and Dental University.

Papers
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Journal ArticleDOI

Vertical-cavity surface-emitting laser chip bonding by surface-tension-driven self-assembly for optoelectronic heterogeneous integration

TL;DR: In this paper, a 12-channel vertical-cavity surface-emitting laser (VCSEL) is self-assembled on Si and glass wafers using water surface tension as a driving force.
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High Level Oscillations With Narrow Linewidth in Magnetic Nano-Contact Spin Torque Oscillator With Synthetic AF Spin-Valve Structure

TL;DR: In this paper, the current induced magnetization dynamics, so called spin torque oscillation, in magnetic nano-contact MR element with a synthetic antiferromagnetic type spin-valve structure under high in-plane applied magnetic field of 0.9-1 kOe was investigated.
Proceedings ArticleDOI

Novel W2W/C2W Hybrid Bonding Technology with High Stacking Yield Using Ultra-Fine Size, Ultra-High Density Cu Nano-Pillar (CNP) for Exascale 2.5D/3D Integration

TL;DR: In this article, the authors proposed a novel hybrid bonding technology with a high stacking yield using ultra-high density Cu nano-pillar (CNP) for exascale 2.5D/3D integration.
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Transcatheter aortic valve implantation in a patient with severe aortic valve stenosis, colon cancer, and obstructive ileus: A case report.

TL;DR: TAVI could be useful for symptomatic severe AS in high-risk patients prior to non-cardiac surgery, especially for malignant tumors, and transcatheter aortic valve implantation may be a useful option to reduce the incidence of complications and the time to surgery for the malignancy.
Proceedings ArticleDOI

Revisiting the silicon-lattice in the high-density 3D-LSIs — In the perspective of device reliability

TL;DR: In this article, the dependence of device reliability on the lattice perfectness of the active silicon in the high-density 3D-LSIs containing through-silicon via (TSV) and microbump (μ-bump) is extensively investigated using hard X rays at SPring8.