다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Countless millions of people have died from tuberculosis, a chronic infectious disease caused by the tubercle bacillus. The complete genome sequence of the best-characterized strain of Mycobacterium tuberculosis, H37Rv, has been determined and analysed in order to improve our understanding of the biology of this slow-growing pathogen and to help the conception of new prophylactic and therapeutic interventions. The genome comprises 4,411,529 base pairs, contains around 4,000 genes, and has a very high guanine + cytosine content that is reflected in the biased amino-acid content of the proteins. M. tuberculosis differs radically from other bacteria in that a very large portion of its coding capacity is devoted to the production of enzymes involved in lipogenesis and lipolysis, and to two new families of glycine-rich proteins with a repetitive structure that may represent a source of antigenic variation.

/pdf/deciphering-the-biology-of-mycobacterium-tuberculosis-from-56gdir9h56.pdf

Deciphering the biology of Mycobacterium tuberculosis from the complete genome sequence

BackgroundExperimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. MethodsWe conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. ResultsAt 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in t...

https://www.nejm.org/doi/pdf/10.1056/NEJMoa1707914

Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Pseudomonas aeruginosa is a ubiquitous environmental bacterium that is one of the top three causes of opportunistic human infections. A major factor in its prominence as a pathogen is its intrinsic resistance to antibiotics and disinfectants. Here we report the complete sequence of P. aeruginosa strain PAO1. At 6.3 million base pairs, this is the largest bacterial genome sequenced, and the sequence provides insights into the basis of the versatility and intrinsic drug resistance of P. aeruginosa. Consistent with its larger genome size and environmental adaptability, P. aeruginosa contains the highest proportion of regulatory genes observed for a bacterial genome and a large number of genes involved in the catabolism, transport and efflux of organic compounds as well as four potential chemotaxis systems. We propose that the size and complexity of the P. aeruginosa genome reflect an evolutionary adaptation permitting it to thrive in diverse environments and resist the effects of a variety of antimicrobial substances.

/pdf/complete-genome-sequence-of-pseudomonas-aeruginosa-pao1-an-u88d4e2n3p.pdf

Complete genome sequence of Pseudomonas aeruginosa PAO1, an opportunistic pathogen.

https://www.thelancet.com/pdfs/journals/lancet/PIIS0140-6736(00)04403-2.pdf

Whole genome sequencing of meticillin-resistant Staphylococcus aureus

Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to consider to implement an SNN. In this study, we generated the STDP of a biological synapse with non-volatile tunnel-field-effect-transistor (tunnel FET) memory that has a charge-storage layer and a tunnel FET structure. Tunnel FET is a promising structure to reduce the operation voltage owing to its steep sub-threshold slope. Therefore, the non-volatile tunnel-FET memory we propose enables the implementation of low-operation-voltage SNNs. This article reports the ${I-V}$ , programming, and both symmetric and asymmetric STDP characteristics of a non-volatile tunnel-FET memory with p-channel-MOS-like operation.

/pdf/generation-of-stdp-with-non-volatile-tunnel-fet-memory-for-26id9igo4i.pdf

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

1 Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan Phone: +81-22-795-6906, Fax: +81-22-795-6907, E-mail: sdlab@sd.mech.tohoku.ac.jp 2 Department of Biomedical Engineering, Graduate School of Biomedical Engineering, Tohoku University 3 Research Institute of Electrical Communication, Tohoku University 4 Department of Applied Information Science, Graduate School of Information Sciences, Tohoku University 5 Department of Physiology, Tohoku University, School of Medicine

Development of Si Double-sided Microelectrode for Platform of Brain Signal Processing System

A reconfigurable memory network for a parallel image-processing LSI with a three-dimensional structure is proposed. The proposed memory network can be dynamically configured by changing the connections between processing elements (PEs) and memories in accordance with the required part of the stored image data. In addition, a specification of the data bandwidth between PEs and the proposed memory network can be changed in the synchronization with single instruction stream-multiple data stream (SIMD) and multiple instruction stream-multiple data stream (MIMD) operations. Therefore, data transfer has greater flexibility. Also, from the result of the performance evaluation by implementation into the field programmable gate array (FPGA), it was successfully shown that the proposed memory network reduced the execution time by up to 28.2% for a 9×9 filtering operation.

New Reconfigurable Memory Architecture for Parallel Image Processing LSI with Three-Dimensional Structure

This paper deals with multichip-to-wafer (MC2W) 3D stacking technologies based on via-last TSV integration. In this work, we verify the effectiveness of room-temperature CVD named OER (Ozone-Ethylene Radical generation)-TEOS-CVD® to deposit a TSV liner SiO 2 layer. The film quality including dielectric constants is evaluated alternative to plasma-enhanced (PE)-TEOS-CVD SiO 2 . In addition, solid-solid inter-diffusion bonding of 3-μm-thick Sn with 0.5-μm-thick Au is demonstrated to achieve multiple multichip bonding for retinal prosthesis system fabrication with a 3D artificial retina chip. Low-temperature bonding at 190°C is realized by the Au/Sn metallurgy. Good bondability is also obtained with the Au electrodes preliminarily exposed at high temperature. There are no Sn microbump extrusion, which is highly expected to be used for 3D-ICs with fine-pitch solder microbump interconnection.

Low-temperature multichip-to-wafer 3D integration based on via-last TSV with OER-TEOS-CVD and microbump bonding without solder extrusion

3D integration is the most promising technology to enhance LSI performance beyond scaling theory. 3D LSIs have lots of advantages such as short wiring length, small chip size, and small pin capacitances, which leads to low power dissipation and high processing speed. However, there are still reliability problems to be solved. This paper describes mechanical stresses caused by Cu TSVs and CuSn microbumps and design guideline to minimize stress effects on 3D LSIs.

Tetsu Tanaka

Papers

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

Development of Si Double-sided Microelectrode for Platform of Brain Signal Processing System

New Reconfigurable Memory Architecture for Parallel Image Processing LSI with Three-Dimensional Structure

Low-temperature multichip-to-wafer 3D integration based on via-last TSV with OER-TEOS-CVD and microbump bonding without solder extrusion

3D LSI technology and reliability issues