다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Countless millions of people have died from tuberculosis, a chronic infectious disease caused by the tubercle bacillus. The complete genome sequence of the best-characterized strain of Mycobacterium tuberculosis, H37Rv, has been determined and analysed in order to improve our understanding of the biology of this slow-growing pathogen and to help the conception of new prophylactic and therapeutic interventions. The genome comprises 4,411,529 base pairs, contains around 4,000 genes, and has a very high guanine + cytosine content that is reflected in the biased amino-acid content of the proteins. M. tuberculosis differs radically from other bacteria in that a very large portion of its coding capacity is devoted to the production of enzymes involved in lipogenesis and lipolysis, and to two new families of glycine-rich proteins with a repetitive structure that may represent a source of antigenic variation.

/pdf/deciphering-the-biology-of-mycobacterium-tuberculosis-from-56gdir9h56.pdf

Deciphering the biology of Mycobacterium tuberculosis from the complete genome sequence

BackgroundExperimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. MethodsWe conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. ResultsAt 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in t...

https://www.nejm.org/doi/pdf/10.1056/NEJMoa1707914

Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Pseudomonas aeruginosa is a ubiquitous environmental bacterium that is one of the top three causes of opportunistic human infections. A major factor in its prominence as a pathogen is its intrinsic resistance to antibiotics and disinfectants. Here we report the complete sequence of P. aeruginosa strain PAO1. At 6.3 million base pairs, this is the largest bacterial genome sequenced, and the sequence provides insights into the basis of the versatility and intrinsic drug resistance of P. aeruginosa. Consistent with its larger genome size and environmental adaptability, P. aeruginosa contains the highest proportion of regulatory genes observed for a bacterial genome and a large number of genes involved in the catabolism, transport and efflux of organic compounds as well as four potential chemotaxis systems. We propose that the size and complexity of the P. aeruginosa genome reflect an evolutionary adaptation permitting it to thrive in diverse environments and resist the effects of a variety of antimicrobial substances.

/pdf/complete-genome-sequence-of-pseudomonas-aeruginosa-pao1-an-u88d4e2n3p.pdf

Complete genome sequence of Pseudomonas aeruginosa PAO1, an opportunistic pathogen.

https://www.thelancet.com/pdfs/journals/lancet/PIIS0140-6736(00)04403-2.pdf

Whole genome sequencing of meticillin-resistant Staphylococcus aureus

Three-dimensional integrated circuit (3D IC) is one of the promising ways to enhance IC performance. Each IC chip is mechanically connected by organic adhesive and metal microbumps. Coefficient of thermal expansion (CTE) mismatch between materials causes local bending stress in IC chips, leading to negative effects in IC performance. In this study, we have fabricated a test structure with DRAM cell array having planar MOS capacitors. Using the test structure, we measured both DRAM chip bending profiles and retention time modulations of DRAM cell array. Consequently, we have successfully demonstrated that the local bending stress in IC chips can be two-dimensionally evaluated using the DRAM cell array with planar MOS capacitances. This evaluation methods leads to realization of 3D IC with high reliability.

Novel local stress evaluation method in 3D IC using DRAM cell array with planar mOS capacitors

To restore visual sensation of blind patients, we have proposed a fully implantable retinal prosthesis comprising an three dimensionally (3D) stacked retinal chip for transforming optical signal to electrical signal, a flexible cable with stimulus electrode array for stimulating retina cells, and coupling coils for power transmission. For realizing the fully implantable retinal prosthesis, we developed a key component of retinal prosthesis module comprising a retinal prosthesis chip and a flexible cable with stimulus electrode array. In this study, we used a 2D retinal chip as a prototype retinal prosthesis chip. We fabricated a polyimide-based flexible cable of 20μm thickness with 16 channels Pt stimulus electrode array. The retinal prosthesis chip was mounted on the flexible cable and encapsulated by a silicone to protect from corrosive environments in an eyeball. Then, the retinal prosthesis module was completely implanted into an eyeball of a rabbit. We successfully recorded the waveforms of electrically evoked potential (EEP) elicited from the rabbit brain by the current stimulation supplied from the implanted retinal prosthesis module for the first time. EEP amplitudes were proportionally increased according to illumination intensity and irradiation time of the incident light. It means that the rabbit would recognize the change of optical signal by changing the frequency of stimulus current pulse through the implanted retinal chip.

Development of Retinal Prosthesis Module for Fully Implantable Retinal Prosthesis

We demonstrated a CMOS invertor with a 15 ps propagation delay (tpd) at 77 K. This device uses n+ - p+ double-gate SOI MOSFETs with a gate length (LG) of 0.19 micrometers and a gate oxide thickness (tox) around 9 nm. The channel doping concentration of this device is maintained as low as 1015 cm-3 even in the deep submicron gate length regime while maintaining short channel immunity. Therefore, the decreased phonon scattering due to the cryogenic operation causes a significant increase in mobility, which leads to smaller tpd than any other reported values for a given LG. Although the threshold voltage (Vth) increases with a decrease in temperature, we can adjust it for cryogenic operation by controlling tox and the SOI thicknesses (tSi).© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

15 ps cryogenic operation of 0.19-μm-LG n+ - p+ double-gate SOI CMOS

3D-LSI stack containing diametrically highly-scaled through-silicon-vias (TSVs) with diameter 2µm as well as conventional 20 µm-width Cu-TSVs were carefully studied for the thermo-mechanical stress induced by Cu-TSVs via micro-X-ray diffraction using synchrotron radiation at Spring-8. It was observed that the TSV diameter has huge impact on the magnitude of resultant thermo-mechanical stress. The 20 µm-width Cu-TSV has induced more than −1500 MPa of stress in the vicinal Si, while the 2 µm-width Cu-TSV induced less than −10 MPa of compressive stress in the surrounding Si. Therefore by decreasing the TSV diameter, one can virtually eliminate the thermo-mechanical stress induced by TSV.

Micro-XRD investigation of fine-pitch Cu-TSV induced thermo-mechanical stress in high-density 3D-LSI

https://iopscience.iop.org/article/10.35848/1882-0786/ac18b0/pdf

Tetsu Tanaka

Papers

Novel local stress evaluation method in 3D IC using DRAM cell array with planar mOS capacitors

Development of Retinal Prosthesis Module for Fully Implantable Retinal Prosthesis

15 ps cryogenic operation of 0.19-μm-LG n+ - p+ double-gate SOI CMOS

Micro-XRD investigation of fine-pitch Cu-TSV induced thermo-mechanical stress in high-density 3D-LSI

High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path