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Institution

Finisar

CompanySunnyvale, California, United States
About: Finisar is a company organization based out in Sunnyvale, California, United States. It is known for research contribution in the topics: Signal & Laser. The organization has 900 authors who have published 1523 publications receiving 22634 citations.


Papers
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Patent
07 Mar 2006
TL;DR: In this paper, the authors present a 1OG XFP transceiver that includes integrated CDR bypass functionality for reducing jitter, such that the CDR can be bypassed at rate less than about 10Gb/s.
Abstract: This disclosure concerns transceivers that include CDR bypass functionality. In one example, a 1OG XFP transceiver module includes integrated CDR functionality for reducing jitter. The 1OG XFP transceiver module also implements CDR bypass functionality so that the CDR can be bypassed at rate less than about 10Gb/s, such as the Fibre Channel 8.5Gb/s rate for example.

36 citations

Patent
18 Jan 2005
TL;DR: In this paper, a fiber optic communication system consisting of an optical signal source adapted to produce a frequency modulated signal and an optical spectrum reshaper adapted to receive the signal and output a substantially amplitude modulated one is described.
Abstract: A fiber optic communication system, comprising: an optical signal source adapted to produce a frequency modulated signal; and an optical spectrum reshaper adapted to receive the frequency modulated signal and output a substantially amplitude modulated signal; wherein the optical spectrum reshaper limits the bandwidth of the frequency modulated signal.

36 citations

Patent
James R. Biard1, Klein L. Johnson1, Ralph H. Johnson1, Gyoungwon Park2, Tzu-Yu Wang1 
29 Oct 2003
TL;DR: In this paper, a process for making a laser structure is described, which involves dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contact, thick and thin pad dielectrics, air bridges and wafer thinning.
Abstract: A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.

36 citations

Patent
31 Oct 2002
TL;DR: In this paper, a transceiver module including a primary printed circuit board and a secondary board in an enclosure is presented, where the primary board is coupled to the secondary board by a connector pin that protrudes out of a critical surface of the enclosure.
Abstract: A transceiver module including a primary printed circuit board and a secondary printed circuit board in an enclosure is presented. The primary printed circuit board is coupled to the secondary printed circuit board by a connector pin that protrudes out of a critical surface of the enclosure. The printed circuit boards may be positioned substantially parallel to the critical surface of the enclosure. When a transmitter is electrically connected to the primary printed circuit board and a receiver is electrically connected to the secondary printed circuit board, the transmitter and the receiver may be positioned in a plane that is also substantially parallel to the plane of the critical surface.

36 citations

Journal ArticleDOI
TL;DR: Polarization-insensitive silicon nitride (SiN) 4-channel wavelength (de)multiplexers based on Mach-Zehnder interferometer lattice filters for coarse wavelength division multiplexing (CWDM) in the O-band are demonstrated in a SiN-on-silicon photonic platform.
Abstract: Polarization-insensitive silicon nitride (SiN) 4-channel wavelength (de)multiplexers based on Mach-Zehnder interferometer lattice filters for coarse wavelength division multiplexing (CWDM) in the O-band are demonstrated in a SiN-on-silicon photonic platform. For the best-performing device, the insertion loss was < 2.8 dB, the inter-channel crosstalk was < -11.5 dB for a polarization scrambled input, and the passband shift between the orthogonal polarizations was < 1.5 nm. Across the 200mm wafer, the die-averaged insertion loss and maximum crosstalk were 3.1 dB and -10.6 dB, respectively. The higher-than-expected crosstalk was due to dimensional variations. This work shows the potential of SiN photonic circuits for CWDM without polarization diversity.

36 citations


Authors

Showing all 900 results

NameH-indexPapersCitations
Yaron Silberberg8746228905
Ray T. Chen5488912078
Naresh R. Shanbhag493259202
N.A. Olsson381586360
Andrew C. Singer383026721
Jae-Hyun Ryou352605038
Joyce K. S. Poon331564184
Yasuhiro Matsui311432844
Ying Luo301052992
Lewis B. Aronson29742251
Thomas W. Mossberg291312611
Daniel Mahgerefteh25881830
Gil Cohen25722564
Christoph M. Greiner241001423
James A. Cox23721718
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20221
20213
202019
201929
201821
201743