University of Electro-Communications

About: University of Electro-Communications is a education organization based out in Tokyo, Japan. It is known for research contribution in the topics: Laser & Robot. The organization has 8041 authors who have published 16950 publications receiving 235832 citations. The organization is also known as: UEC & Denki-Tsūshin Daigaku.

Adaptive Dynamic Walking of a Quadruped Robot on Irregular Terrain Based on Biological Concepts

Abstract: We have been trying to induce a quadruped robot to walk with medium walking speed on irregular terrain based on biological concepts. We propose the necessary conditions for stable dynamic walking on irregular terrain in general, and we design the mechanical system and the neural system by comparing biological concepts with those necessary conditions described in physical terms. A PD controller at the joints can construct the virtual spring-damper system as the visco-elasticity model of a muscle. The neural system model consists of a central pattern generator (CPG) and reflexes. A CPG receives sensory input and changes the period of its own active phase. The desired angle and P-gain of each joint in the virtual spring-damper system is switched based on the phase signal of the CPG. CPGs, the motion of the virtual spring-damper system of each leg and the rolling motion of the body are mutually entrained through the rolling motion feedback to CPGs, and can generate adaptive walking. We report on our experimen...

Trigonal warping effect of carbon nanotubes

Abstract: Chirality-dependent van Hove singularities (vHs) of the one-dimensional electronic density of states (DOS) are discussed in connection with resonant Raman spectroscopy. The effect of trigonal warping on the energy dispersion relations near the Fermi energy splits the peaks of the density of states for metallic nanotubes, and the magnitude of this effect depends on the chiral angle of the carbon nanotube. The width of the peak splitting has a maximum for metallic zigzag nanotubes, and no splitting is obtained for armchair nanotubes or semiconducting nanotubes. We also find an additional logarithmic singularity in the electronic DOS for carbon nanotubes that is related to a two-dimensional singularity, which does not depend on either the diameter or the chirality.

Berry's Phase and Absence of Back Scattering in Carbon Nanotubes.

Abstract: The absence of back scattering in carbon nanotubes is shown to be ascribed to Berry's phase which corresponds to a sign change of the wave function under a spin rotation of a neutrino-like particle in a two-dimensional graphite. Effects of trigonal warping of the bands appearing in a higher order k · p approximation are shown to give rise to a small probability of back scattering.

Magnetization vector manipulation by electric fields

Abstract: Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampere field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.