University of Mons

About: University of Mons is a education organization based out in Mons, Belgium. It is known for research contribution in the topics: Large Hadron Collider & Standard Model. The organization has 3073 authors who have published 9465 publications receiving 294776 citations.

Search for Dark Matter and Large Extra Dimensions in pp Collisions Yielding a Photon and Missing Transverse Energy

Abstract: Results are presented from a search for new physics in the final state containing a photon and missing transverse energy. The data correspond to an integrated luminosity of 5.0 inverse femtobarns collected in pp collisions at sqrt(s)=7 TeV by the CMS experiment. The observed event yield agrees with standard-model expectations for photon plus missing transverse energy events. Using models for production of dark-matter particles (chi), we set 90% confidence level (CL) upper limits of 13.6--15.4 femtobarns on chi production in the photon plus missing transverse energy state. These provide the most sensitive upper limits for spin-dependent chi-nucleon scattering for chi masses between 1 and 100 GeV. For spin-independent contributions, the present limits are extended to chi masses below 3.5 GeV. For models with 3--6 large extra dimensions, our data exclude extra-dimensional Planck scales between 1.65 and 1.71 TeV at 95% CL.

Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols

Abstract: Irradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effective approach to engineer chemically active defects in 2D materials. In this context, argon-ion bombardment has been utilized to introduce sulfur vacancies in monolayer molybdenum disulfide (MoS2). However, a detailed understanding of the effects of generated defects on the functional properties of 2D MoS2 is still lacking. In this work, the correlation between critical electronic device parameters and the density of sulfur vacancies is systematically investigated through the fabrication and characterization of back-gated monolayer MoS2 field-effect transistors (FETs) exposed to a variable fluence of low-energy argon ions. The electrical properties of pristine and ion-irradiated FETs can be largely improved/recovered by exposing the devices to vapors of short linear thiolated molecules. Such a solvent-free chemical treatment—carried out strictly under inert atmosphere—rules out secondary healing effects induced by oxygen or oxygen-containing molecules. The results provide a guideline to design monolayer MoS2 optoelectronic devices with a controlled density of sulfur vacancies, which can be further exploited to introduce ad hoc molecular functionalities by means of thiol chemistry approaches.

Measurement of the differential and double-differential Drell-Yan cross sections in proton-proton collisions at s√ = 7 TeV

Abstract: Measurements of the differential and double-differential Drell-Yan cross sections are presented using an integrated luminosity of 4.5 (4.8) fb−1 in the dimuon (dielectron) channel of proton-proton collision data recorded with the CMS detector at the LHC at s√ = 7 TeV. The measured inclusive cross section in the Z-peak region (60–120 GeV) is σ(ll) = 986.4 ± 0.6 (stat.) ± 5.9 (exp. syst.) ± 21.7 (th. syst.) ± 21.7 (lum.) pb for the combination of the dimuon and dielectron channels. Differential cross sections dσ/dm for the dimuon, dielectron, and combined channels are measured in the mass range 15 to 1500 GeV and corrected to the full phase space. Results are also presented for the measurement of the double-differential cross section d2σ/dm d|y| in the dimuon channel over the mass range 20 to 1500 GeV and absolute dimuon rapidity from 0 to 2.4. These measurements are compared to the predictions of perturbative QCD calculations at next-to-leading and next-to-next-to-leading orders using various sets of parton distribution functions.