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Journal ArticleDOI

All Si-based optical interconnect for interchip signal transmission

TLDR
In this paper, the authors demonstrate the ability to transmit electrical signals using Si-based components, i.e., the light was generated by biasing a p-n junction at avalanche breakdown voltage, light was coupled through a fiber cable made of SiO/sub 2/, and detected by an Sibased avalanche photodiode.
Abstract
Barriers to the commercial implementation of optical interconnects between integrated circuits (ICs) center around the fabrication of optical elements on wafers through conventional Si processes. Most other approaches for optical interconnects use direct bandgap emitters that require drastic changes in conventional fabrication processes. In this work, we demonstrate the ability to transmit electrical signals using Si-based components, i.e., the light was generated by biasing a p-n junction at avalanche breakdown voltage, light was coupled through a fiber cable made of SiO/sub 2/, and detected by an Si-based avalanche photodiode. Results presented demonstrate the switching behavior of the light emitter, transmission of the signal across the fiber, and measurement of the signal limited by the bandwidth of the receiver amplifier.

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Citations
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Journal ArticleDOI

The Emergence of Silicon Photonics as a Flexible Technology Platform

TL;DR: This paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success.
Journal ArticleDOI

Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects

TL;DR: In this article, the authors review the present status of light emitters based on SiGe nanostructures and propose a new route toward CMOS compatible light emitter for on-chip optical interconnects.
Journal ArticleDOI

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

TL;DR: In this paper, the authors review state-of-the-art photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc.) and noble metal plasmons.

Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects Recent progress in understanding the physics of these nanostructures suggests that it is possible to use them to fabricate more efficient light-emitting devices.

TL;DR: In this article, the authors review the present status of light emitters based on SiGe nanostructures and propose a new route toward CMOS compatible light emitter for on-chip optical interconnects.
References
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Journal ArticleDOI

Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

TL;DR: In this paper, the authors have designed, fabricated, and tested vertical-cavity surface-emitting laser (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m.
BookDOI

Semiconductor devices for optical communication

Henry Kressel, +1 more
TL;DR: The thrombin receptor PAR1 mediates APC signaling in tissues culture and can mediate opposite cellular responses in endothelial cells through PAR1 activation 4.4.
Journal ArticleDOI

256-channel bidirectional optical interconnect using VCSELs and photodiodes on CMOS

TL;DR: In this paper, a bidirectional optical interconnect between two printed circuit boards containing optoelectronic (OE) very large scale integration (VLSI) circuits was constructed using vertical cavity surface emitting lasers (VCSELs) and photodiodes (PDs).
Journal ArticleDOI

Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs

TL;DR: In this paper, high bit rate data transmission with monolithic InGaAsN VCSELs, emitting 700 /spl mu/W in singlemode operation at room temperature, is demonstrated.
Journal ArticleDOI

Silicon-Based Microphotonics and Integrated Optoelectronics

TL;DR: In this article, the authors examine the cost of all interconnects, and it becomes apparent that there is an exponential growth in cost per interconnect with the length of the interconnect.
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