An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
TL;DR: In this article, the authors presented an enhancement to an existing approximation for the value of an intermediate variable beta to the gate and drain voltages of a symmetric double-gate MOSFET.
Abstract: In developing the drain current model of a symmetric double-gate MOSFET, one encounters a transcendental equation relating the value of an intermediate variable beta to the gate and drain voltages. In this brief, we present an enhancement to an existing approximation for beta, which improves its numerical robustness. We also benchmark our suggested enhancement and show that our enhancement is as computationally efficient as the original approximation but is numerically much more robust, with an accuracy that is comparable to the original approximation.
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TL;DR: In this paper, a Monte Carlo event generator for the simulation of QCD-instanton induced processes in deep-inelastic scattering (HERA) is described. But this generator is designed as an ''add-on'' hard process generator interfaced to the general hadronic event simulation package HERWIG.
Abstract: We describe a Monte Carlo event generator for the simulation of QCD-instanton induced processes in deep-inelastic scattering (HERA). The QCDINS package is designed as an ``add-on'' hard process generator interfaced to the general hadronic event simulation package HERWIG. It incorporates the theoretically predicted production rate for instanton-induced events as well as the essential characteristics that have been derived theoretically for the partonic final state of instanton-induced processes: notably, the flavour democratic and isotropic production of the partonic final state, energy weight factors different for gluons and quarks, and a high average multiplicity O(10) of produced partons with a Poisson distribution of the gluon multiplicity. While the subsequent perturbative evolution of the generated partons is always handled by the HERWIG package, the final hadronization step may optionally be performed also by means of the general hadronic event simulation package JETSET.
28 citations
References
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TL;DR: A new discussion of the complex branches of W, an asymptotic expansion valid for all branches, an efficient numerical procedure for evaluating the function to arbitrary precision, and a method for the symbolic integration of expressions containing W are presented.
Abstract: The LambertW function is defined to be the multivalued inverse of the functionw →we
w
. It has many applications in pure and applied mathematics, some of which are briefly described here. We present a new discussion of the complex branches ofW, an asymptotic expansion valid for all branches, an efficient numerical procedure for evaluating the function to arbitrary precision, and a method for the symbolic integration of expressions containingW.
5,091 citations
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TL;DR: In this article, a continuous analytic currentvoltage model for double-gate MOSFETs is presented, which is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation.
Abstract: This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I/sub ds/(V/sub g/,V/sub ds/) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.
345 citations
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TL;DR: In this article, an analytic potential model for long-channel symmetric and asymmetric double-gate MOSFETs is presented, which is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation.
Abstract: This paper presents an analytic potential model for long-channel symmetric and asymmetric double-gate (DG) MOSFETs. The model is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation. By preserving the proper physics, volume inversion in the subthreshold region is well accounted for in the model. The resulting analytic expressions of the drain-current, terminal charges, and capacitances for long-channel DG MOSFETs are continuous in all operation regions, i.e., linear, saturation, and subthreshold, making it suitable for compact modeling. As no fitting parameters are invoked throughout the derivation, the model is physical and predictive. All parameter formulas are validated by two-dimensional numerical simulations with excellent agreement. The model has been implemented in Simulation Program with Integrated Circuit Emphasis version 3 (SPICE3), and the feasibility is demonstrated by the transient analysis of sample CMOS circuits.
187 citations
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TL;DR: In this article, a charge-based model for undoped DG MOSFETs under symmetrical operation is proposed, which aims at giving a comprehensive understanding of the device from the design strategy.
Abstract: We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique gms/ID design methodology for DG architectures. © 2004 Elsevier Ltd. All rights reserved.
168 citations
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TL;DR: Explicit continuous models for both double-gate and surrounding-gate MOSFETs are presented in this paper, which can express the drain current, terminal charge, transconductance, and transcapacitance as explicit functions of applied voltages as well as the structural parameters.
Abstract: Explicit continuous models for both double-gate (DG) and surrounding-gate (SG) MOSFETs are presented. These models evolve from previous DG and SG MOSFETs models, which need to solve implicit equations for intermediate parameters by numerical iteration or the table lookup method. By developing approximate explicit solutions for the intermediate parameters, we can express the drain current, terminal charge, transconductance, and transcapacitance as explicit functions of applied voltages as well as the structural parameters. High accuracy and efficiency, combined with inherited favorable features from the previous models, make these new models suitable for circuit simulation programs.
131 citations
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