Journal ArticleDOI
An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
TLDR
In this article, the authors presented an enhancement to an existing approximation for the value of an intermediate variable beta to the gate and drain voltages of a symmetric double-gate MOSFET.Abstract:
In developing the drain current model of a symmetric double-gate MOSFET, one encounters a transcendental equation relating the value of an intermediate variable beta to the gate and drain voltages. In this brief, we present an enhancement to an existing approximation for beta, which improves its numerical robustness. We also benchmark our suggested enhancement and show that our enhancement is as computationally efficient as the original approximation but is numerically much more robust, with an accuracy that is comparable to the original approximation.read more
Citations
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Journal ArticleDOI
QCDINS 2.0 - A Monte Carlo generator for instanton-induced processes in deep-inelastic scattering
A. Ringwald,F. Schrempp +1 more
TL;DR: In this paper, a Monte Carlo event generator for the simulation of QCD-instanton induced processes in deep-inelastic scattering (HERA) is described. But this generator is designed as an ''add-on'' hard process generator interfaced to the general hadronic event simulation package HERWIG.
References
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Journal ArticleDOI
On the Lambert W function
TL;DR: A new discussion of the complex branches of W, an asymptotic expansion valid for all branches, an efficient numerical procedure for evaluating the function to arbitrary precision, and a method for the symbolic integration of expressions containing W are presented.
Journal ArticleDOI
A continuous, analytic drain-current model for DG MOSFETs
TL;DR: In this article, a continuous analytic currentvoltage model for double-gate MOSFETs is presented, which is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation.
Journal ArticleDOI
An analytic potential model for symmetric and asymmetric DG MOSFETs
Huaxin Lu,Yuan Taur +1 more
TL;DR: In this article, an analytic potential model for long-channel symmetric and asymmetric double-gate MOSFETs is presented, which is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation.
Journal ArticleDOI
A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
Jean-Michel Sallese,Francois Krummenacher,Fabien Prégaldiny,Christophe Lallement,A. S. Roy,Christian Enz +5 more
TL;DR: In this article, a charge-based model for undoped DG MOSFETs under symmetrical operation is proposed, which aims at giving a comprehensive understanding of the device from the design strategy.
Journal ArticleDOI
Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs
TL;DR: Explicit continuous models for both double-gate and surrounding-gate MOSFETs are presented in this paper, which can express the drain current, terminal charge, transconductance, and transcapacitance as explicit functions of applied voltages as well as the structural parameters.
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