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Open AccessJournal ArticleDOI

Carrier population control and surface passivation in solar cells

TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.
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This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.

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Citations
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Journal ArticleDOI

Study of Surface Passivation and Charge Transport Barriers in DASH Solar Cell

TL;DR: In this paper, the surface passivation and charge transport mechanism using Sentaurus TCAD was studied for asymmetric heterocontact solar cells. But the authors only considered the hole and electron contact.
Journal ArticleDOI

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Six/Ni3+ Self-Doped NiOx Passivating Contact

TL;DR: In this paper , a Ni3+ self-doped NiOx film is obtained by tuning the reactive oxygen atmosphere to construct the optimized c-Si/NiOx heterostructure band alignment.
Journal ArticleDOI

Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers

- 01 Jan 2022 - 
TL;DR: In this article , the doping, passivation and contact properties of boron-doped polysilicon (poly-Si) layers are analyzed to understand the two key limiting factors for industrial adoption of p+ poly-Si based passivated contacts: challenges with diffusion and challenges with screen printed, fire-through (FT) metallization.
Journal ArticleDOI

Concentrator In2O3:F/(n+pp+)c-Si/Al solar cells with Al-alloyed BSF and Ag-free multi-wire metallization using transparent conductive polymers

TL;DR: In this article, the authors have developed high efficiency low concentrator crystalline silicon (c-Si) solar cells using the standard SiNx/(n+pp+) c-Si/Al structures with a P-doped n+-emitter and screen-printed Al-alloyed Al-p+ back-surface-field (BSF).
References
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Journal ArticleDOI

Auger coefficients for highly doped and highly excited silicon

J. Dziewior, +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
Journal ArticleDOI

Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Book

Physics of solar cells : from basic principles to advanced concepts

Peter Würfel, +1 more
TL;DR: In this article, the basic structure of solar cells and the limitations on energy conversion in solar cells are discussed, as well as some concepts for improving the efficiency of the solar cells.
Journal ArticleDOI

Charge Carrier Separation in Solar Cells

TL;DR: In this paper, the authors show that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact.
Journal ArticleDOI

Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells

TL;DR: In this paper, the authors examined the application of transparent MoOx films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells.
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