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Open AccessJournal ArticleDOI

Carrier population control and surface passivation in solar cells

TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.
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This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.

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Citations
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Journal ArticleDOI

Efficient Passivation and Low Resistivity for p+-Si/TiO2Contact by Atomic Layer Deposition

TL;DR: In this article, the authors acknowledge the support of the Australian Renewable Energy Agency (ARENA), the Australian Centre for Advanced Photovoltaics (ACAP), and the ANFF ACT Node in carrying out this research.
Journal ArticleDOI

Interface Engineering of CZTS/TiO2 Heterojunction Using Wide‐Bandgap Ga2O3 Passivation Interlayer for Efficient Charge Extraction

TL;DR: In this paper , an ultrawide-bandgap Ga2O3 film is inserted between CZTS absorber and TiO2 electron transport layer to passivate the electrically active interface trap states.
Journal ArticleDOI

Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces

TL;DR: In this paper, the impact of oxidizing pre-treatments and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells, was studied.
References
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Journal ArticleDOI

Auger coefficients for highly doped and highly excited silicon

J. Dziewior, +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
Journal ArticleDOI

Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Book

Physics of solar cells : from basic principles to advanced concepts

Peter Würfel, +1 more
TL;DR: In this article, the basic structure of solar cells and the limitations on energy conversion in solar cells are discussed, as well as some concepts for improving the efficiency of the solar cells.
Journal ArticleDOI

Charge Carrier Separation in Solar Cells

TL;DR: In this paper, the authors show that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact.
Journal ArticleDOI

Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells

TL;DR: In this paper, the authors examined the application of transparent MoOx films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells.
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