Carrier population control and surface passivation in solar cells
Andres Cuevas,Yimao Wan,Di Yan,Christian Samundsett,Thomas Allen,Xinyu Zhang,Jie Cui,James Bullock +7 more
TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.read more
Citations
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Journal ArticleDOI
23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact
Julie Dreon,Quentin Jeangros,Jean Cattin,Jan Haschke,Luca Antognini,Christophe Ballif,Mathieu Boccard +6 more
TL;DR: In this paper, the influence of the MoOx and intrinsic a-Si:H thicknesses on current-voltage properties and discuss transport and performance-loss mechanisms is discussed. But the authors focus on the front-side hole-selective layer.
Journal ArticleDOI
High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications
Yuqiang Liu,Yajuan Li,Yiliang Wu,Guangtao Yang,Luana Mazzarella,Paul Procel-Moya,Adele C. Tamboli,Klaus Weber,Mathieu Boccard,Olindo Isabella,Xinbo Yang,Baoquan Sun +11 more
TL;DR: In this paper, the development status of high-efficiency crystalline silicon (c-Si) heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterjunction technology, polycrystalline silicon based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free contact technology are reviewed.
Journal ArticleDOI
Polysilicon passivated junctions: The next technology for silicon solar cells?
TL;DR: In this paper, the authors provide a perspective of the remaining challenges and potential of poly-Si junctions to transform the PV industry, including those associated with the cost of and damage to the polySi layers due to the cell's metallization process.
Journal ArticleDOI
Status and perspectives of crystalline silicon photovoltaics in research and industry
TL;DR: In this paper , the authors survey the key changes related to materials and industrial processing of silicon PV components and discuss what it will take for other PV technologies to compete with silicon on the mass market.
Journal ArticleDOI
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
Malte Köhler,Malte Köhler,Manuel Pomaska,Paul Procel,Rudi Santbergen,A. O. Zamchiy,Bart Macco,Andreas Lambertz,Weiyuan Duan,Pengfei Cao,Benjamin Klingebiel,Shenghao Li,Alexander Eberst,Alexander Eberst,Martina Luysberg,Kaifu Qiu,Kaifu Qiu,Olindo Isabella,Friedhelm Finger,Thomas Kirchartz,Thomas Kirchartz,Uwe Rau,Uwe Rau,Kaining Ding +23 more
TL;DR: Kohler et al. as mentioned in this paper proposed a passivating contact based on a double layer of nanocrystalline silicon carbide that overcomes the trade-offs of conductivity, defect passivation and optical transparency.
References
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Journal ArticleDOI
Passivation of c-Si surfaces by ALD tantalum oxide capped with PECVD silicon nitride
TL;DR: In this article, the surface passivation of a variety of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta2O5) underneath a capping silicon nitride (SiNx) layer by plasma enhanced chemical vapor deposited (PECVD) was investigated.
Journal ArticleDOI
Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
Thomas Allen,Andres Cuevas +1 more
TL;DR: In this article, the Australian government through the Austra-lian Renewable Energy Agency (ARENA) supported by the Australian National Energy Guarantee Scheme (ANES) was used.
Proceedings ArticleDOI
Thick-emitter silicon solar cells
A. Cuevas,M. Balbuena +1 more
TL;DR: In this paper, the best compromise between recombination current, quantum collection efficiency, and sheet resistance is found for relatively thick, moderately doped, surface-passivated emitters.
Journal ArticleDOI
Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
TL;DR: In this paper, an enhanced MIS passivated contact scheme on a phosphorus diffused surface was proposed to improve the interface passivation of silicon solar cells, achieving a conversion efficiency of 21.0% with a moderate Voc=666 mV and FF=0.805.
Journal ArticleDOI
Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films
TL;DR: In this paper, the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells was explored.
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