Carrier population control and surface passivation in solar cells
Andres Cuevas,Yimao Wan,Di Yan,Christian Samundsett,Thomas Allen,Xinyu Zhang,Jie Cui,James Bullock +7 more
TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.read more
Citations
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Firing stability of phosphorus-doped polysilicon passivating contacts: Factors affecting the degradation behavior
TL;DR: In this article , the impact of firing treatments on n-type silicon samples passivated by ex-situ phosphorus-doped polysilicon (poly-Si)/SiOx structures, and identify factors affecting the firing response.
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Carrier selective solution processed molybdenum oxide silicon heterojunctions solar cells with over 12% efficiency
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Potential high efficiency of GaAs solar cell with heterojunction carrier selective contact layers
TL;DR: In this paper, an advanced configuration of gallium arsenide (GaAs) solar cells was proposed, using hydrogenated amorphous silicon (a-Si: H) and zinc oxide (ZnO) layers as passivation and carrier selective contacts (CSC), as alternatives to the conventional epitaxial GaInP CSC layers.
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Dopant-Free Bifacial Silicon Solar Cells
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Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide
Jimmy Melskens,Roel J. Theeuwes,Lachlan E. Black,Willem-Jan H. Berghuis,Bart Macco,Paula C. P. Bronsveld,Wilhelmus M. M. Kessels +6 more
TL;DR: In this article, a fast pulsed-flow plasma enhanced chemical vapor deposition (PECVD) process for the POx layer is introduced, making it possible to increase the Pox deposition rate significantly while maintaining the high surface passivation quality.
References
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Journal ArticleDOI
Auger coefficients for highly doped and highly excited silicon
J. Dziewior,W. Schmid +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
Journal ArticleDOI
Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells
TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Book
Physics of solar cells : from basic principles to advanced concepts
Peter Würfel,Uli Würfel +1 more
TL;DR: In this article, the basic structure of solar cells and the limitations on energy conversion in solar cells are discussed, as well as some concepts for improving the efficiency of the solar cells.
Journal ArticleDOI
Charge Carrier Separation in Solar Cells
TL;DR: In this paper, the authors show that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact.
Journal ArticleDOI
Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells
TL;DR: In this paper, the authors examined the application of transparent MoOx films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells.
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