Carrier population control and surface passivation in solar cells
Andres Cuevas,Yimao Wan,Di Yan,Christian Samundsett,Thomas Allen,Xinyu Zhang,Jie Cui,James Bullock +7 more
TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.read more
Citations
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Journal ArticleDOI
23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact
Julie Dreon,Quentin Jeangros,Jean Cattin,Jan Haschke,Luca Antognini,Christophe Ballif,Mathieu Boccard +6 more
TL;DR: In this paper, the influence of the MoOx and intrinsic a-Si:H thicknesses on current-voltage properties and discuss transport and performance-loss mechanisms is discussed. But the authors focus on the front-side hole-selective layer.
Journal ArticleDOI
High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications
Yuqiang Liu,Yajuan Li,Yiliang Wu,Guangtao Yang,Luana Mazzarella,Paul Procel-Moya,Adele C. Tamboli,Klaus Weber,Mathieu Boccard,Olindo Isabella,Xinbo Yang,Baoquan Sun +11 more
TL;DR: In this paper, the development status of high-efficiency crystalline silicon (c-Si) heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterjunction technology, polycrystalline silicon based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free contact technology are reviewed.
Journal ArticleDOI
Polysilicon passivated junctions: The next technology for silicon solar cells?
TL;DR: In this paper, the authors provide a perspective of the remaining challenges and potential of poly-Si junctions to transform the PV industry, including those associated with the cost of and damage to the polySi layers due to the cell's metallization process.
Journal ArticleDOI
Status and perspectives of crystalline silicon photovoltaics in research and industry
TL;DR: In this paper , the authors survey the key changes related to materials and industrial processing of silicon PV components and discuss what it will take for other PV technologies to compete with silicon on the mass market.
Journal ArticleDOI
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
Malte Köhler,Malte Köhler,Manuel Pomaska,Paul Procel,Rudi Santbergen,A. O. Zamchiy,Bart Macco,Andreas Lambertz,Weiyuan Duan,Pengfei Cao,Benjamin Klingebiel,Shenghao Li,Alexander Eberst,Alexander Eberst,Martina Luysberg,Kaifu Qiu,Kaifu Qiu,Olindo Isabella,Friedhelm Finger,Thomas Kirchartz,Thomas Kirchartz,Uwe Rau,Uwe Rau,Kaining Ding +23 more
TL;DR: Kohler et al. as mentioned in this paper proposed a passivating contact based on a double layer of nanocrystalline silicon carbide that overcomes the trade-offs of conductivity, defect passivation and optical transparency.
References
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Journal ArticleDOI
Low Surface Recombination Velocity by Low-Absorption Silicon Nitride on c-Si
TL;DR: In this article, the authors demonstrate that nearly stoichiometric amorphous silicon nitride (SiN x ) can exhibit excellent surface passivation on both p- and n-type c-Si as well as low absorption at short wavelengths.
Journal ArticleDOI
n- and p-typesilicon Solar Cells with Molybdenum Oxide Hole Contacts☆
TL;DR: In this article, an experimental proof-of-concept for simple solar cell designs on n-and p-type crystalline silicon (c -Si) substrates was provided, which utilized sub-stoichiometric MoO x (x x / poly-Si(n + ) stack with a planar front SiO x / MoO X / ITO stack.
Journal ArticleDOI
Electron‐hole recombination at the Si‐SiO2 interface
TL;DR: In this paper, the surface recombination is dominated by centers whose electron capture cross section is about 100 times greater than their hole capture cross-section, and the maximum recombination occurs when ps≊100ns.
Journal ArticleDOI
Calcium contacts to n-type crystalline silicon solar cells
Thomas Allen,James Bullock,James Bullock,Peiting Zheng,Ben Vaughan,Matthew G. Barr,Yimao Wan,Christian Samundsett,Daniel Walter,Ali Javey,Ali Javey,Andres Cuevas +11 more
TL;DR: In this article, a thin layer of the low work function metal calcium (ϕ 2.9 eV) between the silicon surface and an overlying aluminium capping layer was proposed to achieve low resistance Ohmic contact to n-type c-Si wafers.
Journal ArticleDOI
Titanium oxide: A re-emerging optical and passivating material for silicon solar cells
Jie Cui,Thomas Allen,Yimao Wan,Josephine McKeon,Christian Samundsett,Di Yan,Xinyu Zhang,Cui Yanfeng,Yifeng Chen,Pierre J. Verlinden,Andres Cuevas +10 more
TL;DR: In this article, a thin film of thermal atomic layer deposited (ALD) titanium oxide (TiO 2 ) was applied to the front surface of a rear locally diffused p + nn + front junction solar cell, performing the dual role of surface passivation and single-layer antireflection coating on the textured p + diffusion.
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