Carrier population control and surface passivation in solar cells
Andres Cuevas,Yimao Wan,Di Yan,Christian Samundsett,Thomas Allen,Xinyu Zhang,Jie Cui,James Bullock +7 more
TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.read more
Citations
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Journal ArticleDOI
Progress and Future Prospects of Wide‐Bandgap Metal‐Compound‐Based Passivating Contacts for Silicon Solar Cells
Kun Gao,Qunyu Bi,Xinyu Wang,Wenzhu Liu,Chunfang Xing,Kun Li,Dacheng Xu,Zhaojun Su,Cheng Zhang,Jian Yu,Dongdong Li,Baoquan Sun,James S. Bullock,Xiaohong Zhang,Xin Xin Yang +14 more
TL;DR: In this article , the dopant-free passivating contacts (DFPCs) have attracted great attention, thanks to their potential merits in terms of parasitic absorption loss, ease of deposition, and cost.
Journal ArticleDOI
Progress on the intrinsic a-Si:H films for interface passivation of silicon heterojunction solar cells: A review
TL;DR: A review of the progress in developing i-a-Si:H films, from transition zone to underdense layers, and bilayers for interface passivation of SHJ solar cells is presented in this article.
Journal ArticleDOI
Conductive Cuprous Iodide Hole-Selective Contacts with Thermal and Ambient Stability for Silicon Solar Cells.
Wenjie Lin,Weiliang Wu,Qi Xie,Zongtao Liu,Kaifu Qiu,Lun Cai,Zhirong Yao,Lanxiang Meng,Bin Ai,Zongcun Liang,Hui Shen +10 more
TL;DR: The use of metal iodide instead of metal oxides as hole-selective contacts for efficient silicon solar cells is demonstrated but also has important implications regarding industrial feasibility and longevity for deployment in the field.
Journal ArticleDOI
Adaption of Basic Metal–Insulator–Semiconductor (MIS) Theory for Passivating Contacts Within Numerical Solar Cell Modeling
Andreas Fell,Frank Feldmann,Christoph Messmer,Martin Bivour,Martin C. Schubert,Stefan W. Glunz +5 more
TL;DR: In this article, the suitability of the basic metal-insulator-semiconductor theory, employed as a boundary condition to a numerical model of the semiconductor transport in the absorber, to represent such effects of passivating contacts was explored.
References
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Auger coefficients for highly doped and highly excited silicon
J. Dziewior,W. Schmid +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
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Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells
TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Book
Physics of solar cells : from basic principles to advanced concepts
Peter Würfel,Uli Würfel +1 more
TL;DR: In this article, the basic structure of solar cells and the limitations on energy conversion in solar cells are discussed, as well as some concepts for improving the efficiency of the solar cells.
Journal ArticleDOI
Charge Carrier Separation in Solar Cells
TL;DR: In this paper, the authors show that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact.
Journal ArticleDOI
Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells
TL;DR: In this paper, the authors examined the application of transparent MoOx films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells.
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