Carrier population control and surface passivation in solar cells
Andres Cuevas,Yimao Wan,Di Yan,Christian Samundsett,Thomas Allen,Xinyu Zhang,Jie Cui,James Bullock +7 more
TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.read more
Citations
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Journal ArticleDOI
Controlling Surface Carrier Density via a PEDOT:PSS Gate: An Application to the Study of Silicon-Dielectric Interface Recombination
Journal ArticleDOI
Techno‐economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells
Nathan L. Chang,Geedhika K. Poduval,Borong Sang,Kean Thong Khoo,Michael Woodhouse,Fred Qi,Mohammad Dehghanimadvar,Wei Min Li,Renate Egan,Bram Hoex +9 more
TL;DR: In this paper , the authors examined the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers (MoOx , TiOx and aluminium-doped zinc oxide [AZO]) to use as lower cost alternatives of the pdoped, ndoped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells.
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3-D Modeling of Ultrathin Solar Cells with Nanostructured Dielectric Passivation: Case Study of Chalcogenide Solar Cells
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Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cells
Audrey Morisset,Raphaël Cabal,Valentin Giglia,Adrien Boulineau,Eric De Vito,Amal Chabli,Sébastien Dubois,José Alvarez,Jean-Paul Kleider +8 more
TL;DR: In this paper, the surface passivation of poly-crystalline silicon (c-Si) solar cells with a poly-Si layer on top of a thin silicon oxide (SiOx) is investigated.
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The role of transition region charges between dopant-free asymmetric heterocontacts in interdigitated back contact silicon heterojunction solar cells
Zhenhai Yang,Zhenhai Yang,Xi Yang,Hao Lin,Jiajia Wang,Wei Wang,Pingqi Gao,Baojie Yan,Kuan W.A. Chee,Jiang Sheng,Jichun Ye +10 more
TL;DR: In this article, the authors investigated new principles of field-effect passivation incorporating built-in fixed charges in dielectric passivation thin films (DPTFs) on the rear transition/gap region for photovoltaic performance optimization.
References
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Journal ArticleDOI
Auger coefficients for highly doped and highly excited silicon
J. Dziewior,W. Schmid +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
Journal ArticleDOI
Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells
TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Book
Physics of solar cells : from basic principles to advanced concepts
Peter Würfel,Uli Würfel +1 more
TL;DR: In this article, the basic structure of solar cells and the limitations on energy conversion in solar cells are discussed, as well as some concepts for improving the efficiency of the solar cells.
Journal ArticleDOI
Charge Carrier Separation in Solar Cells
TL;DR: In this paper, the authors show that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact.
Journal ArticleDOI
Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells
TL;DR: In this paper, the authors examined the application of transparent MoOx films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells.
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