Carrier population control and surface passivation in solar cells
Andres Cuevas,Yimao Wan,Di Yan,Christian Samundsett,Thomas Allen,Xinyu Zhang,Jie Cui,James Bullock +7 more
TLDR
In this article, different approaches to suppress surface recombination and to manipulate the concentration of charge carriers by means of doping, work function and charge are discussed, as well as some of the many surface-passivating contacts that are being developed for silicon solar cells.About:
This article is published in Solar Energy Materials and Solar Cells.The article was published on 2018-09-01 and is currently open access. It has received 102 citations till now. The article focuses on the topics: Charge carrier & Passivation.read more
Citations
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Progress in screen-printed metallization of industrial solar cells with SiOx/poly-Si passivating contacts
Pradeep Padhamnath,Ankit Khanna,Nagarajan Balaji,Vinodh Shanmugam,Naomi Nandakumar,Deng Wang,Sun Qian,Huang Ming,Huang Shumei,Baobing Fan,Ding Bingbing,Armin G. Aberle,Shubham Duttagupta +12 more
TL;DR: In this paper, the front and rear screen-printed metallization of large-area n-type monoPolyTM cells with rear-side low-pressure chemical vapor deposited (LPCVD) polysilicon was analyzed.
Journal ArticleDOI
High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture.
TL;DR: This work fabricates a p-InP/n-ZnO/AZO radial heterojunction nanowire solar cell to achieve a photovoltaic conversion efficiency of 17.1%, the best reported value for radial junction nanowires for InP solar cells.
Journal ArticleDOI
Non-epitaxial carrier selective contacts for III-V solar cells: A review
TL;DR: A review of carrier selective contacts for III-V solar cells can be found in this paper, where some of the most recent research on the use of carrier-selective contacts is discussed.
Journal ArticleDOI
Material combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact
TL;DR: In this article, a passivating hole-selective tunnel contact on crystalline silicon (Si) based on an ultrathin thermal SiO2 and a (sub-)monolayer thick aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) with 1 to 7 cycles is investigated.
Journal ArticleDOI
Modeling of surface gap state passivation and Fermi level de-pinning in solar cells
TL;DR: In this article, the behavior of gap states due to coordination defects (e.g., dangling bonds) and metal induced gap states (MIGS) is compared using density functional supercell calculations.
References
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Journal ArticleDOI
Auger coefficients for highly doped and highly excited silicon
J. Dziewior,W. Schmid +1 more
TL;DR: In this article, the recombination kinetics in highly doped p− and n−type silicon were investigated at 77, 300, and 400 K through the radiative band-to-band recombination.
Journal ArticleDOI
Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells
TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Book
Physics of solar cells : from basic principles to advanced concepts
Peter Würfel,Uli Würfel +1 more
TL;DR: In this article, the basic structure of solar cells and the limitations on energy conversion in solar cells are discussed, as well as some concepts for improving the efficiency of the solar cells.
Journal ArticleDOI
Charge Carrier Separation in Solar Cells
TL;DR: In this paper, the authors show that the necessary selectivity is achieved by differences in the conductivities of electrons and holes in two distinct regions of the device, which, for one charge carrier, allows transport to one contact and block transport to the other contact.
Journal ArticleDOI
Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells
TL;DR: In this paper, the authors examined the application of transparent MoOx films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells.
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