Journal ArticleDOI
Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs
Svetlana Vitusevich,Nigel Klein,Alexander Belyaev,S. V. Danylyuk,M. V. Petrychuk,R. V. Konakova,A. M. Kurakin,A. E. Rengevich,A. Yu. Avksentyev,B. A. Danilchenko,V. Tilak,Joseph A. Smart,A. Vertiatchikh,Lester F. Eastman +13 more
TLDR
In this paper, the effect of γ-ray radiation on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350 to 150 nm at room temperature was studied.Abstract:
γ-ray radiation effect has been studied on transport and noise properties of high electron mobility transistors (HEMTs) with gate lengths in the range from 350 to 150 nm at room temperature. Current-voltage (I-V) characteristics of the devices demonstrate higher radiation hardness to 60 Co γ-rays up to doses of 10 9 Rad at larger gate lengths. This confirms the very important role of surface passivation for channel transport of the HEMTs. The deviation of the I-V characteristics parameters saturated current, transconductance, channel conductance, and threshold voltage does not exceed 20% at highest radiation dose. The noise spectra of pre-irradiated devices and after γ-irradiation show different frequency dependences corresponding to different fluctuation processes in the HEMTs. The results are confirmed by dynamic current measurements of the channel conductivity.read more
Citations
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Journal ArticleDOI
Review—Ionizing Radiation Damage Effects on GaN Devices
TL;DR: In this article, the radiation resistance of GaN-based blue light emitting diodes (LEDs) to different types of ionizing radiation, and the role of existing defects in GaN are discussed.
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs
O. Aktas,A. Kuliev,Vinit Kumar,R. Schwindt,S. Toshkov,D. Costescu,James F. Stubbins,Ilesanmi Adesida +7 more
TL;DR: In this article, total-dose gamma radiation effects on static, high-frequency, and pulsed current-voltage characteristics of silicon nitride passivated AlGaN/GaN HEMTs were investigated.
Journal ArticleDOI
Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors
Ling Lv,J.G. Ma,Yan-Rong Cao,Jin-Xin Zhang,W. Zhang,Li Longqiao,Sijuan Xu,Xiaohua Ma,Xiaotang Ren,Yue Hao +9 more
TL;DR: It is concluded that the Ga vacancies introduced maybe the primary reason for the degradation of AlGaN/GaN HEMTs performance.
Journal ArticleDOI
Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation
A. M. Kurakin,Svetlana Vitusevich,S. V. Danylyuk,Hilde Hardtdegen,Norbert Klein,Zahia Bougrioua,B. A. Danilchenko,R. V. Konakova,Alexander Belyaev +8 more
TL;DR: In this article, the effect of a small dose of gamma irradiation on transport characteristics of the two-dimensional electron gas (2DEG) in AlGaN∕GaN heterostructures was investigated.