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Enhanced catalytic activity in strained chemically exfoliated WS 2 nanosheets for hydrogen evolution

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TLDR
Analyses indicate that the enhanced electrocatalytic activity of WS₂ is associated with the high concentration of the strained metallic 1T (octahedral) phase in the as-exfoliated nanosheets.
Abstract
Efficient evolution of hydrogen via electrocatalysis at low overpotentials is promising for clean energy production. Monolayered nanosheets of chemically exfoliated WS2 are shown to be efficient catalysts for hydrogen evolution at very low overpotentials. The enhanced catalytic performance is associated with the high concentration of the strained metallic octahedral phase in the exfoliated nanosheets.

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Theoretical Studies on the Electronic and Optical Properties of Honeycomb BC3 monolayer: A Promising Candidate for Metal-free Photocatalysts.

TL;DR: By employing first-principles computations and particle-swarm optimization calculations, the honeycomb geometry of experimentally realized BC3 sheet is theoretically confirmed, indicating its efficient absorption of solar radiation, fast migration of electron and holes, and excellent capabilities of photoinduced carriers in a photocatalytic process, respectively.
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Determination of Crystal Axes in Semimetallic T′-MoTe2by Polarized Raman Spectroscopy

TL;DR: In this article, a non-destructive method for determining the crystal orientation of few-layer T′-MoTe2 flakes by polarized Raman spectroscopy was proposed, where the experimentally observed Raman modes were assigned to eigenmodes of vibrations predicted by density functional theory calculations.
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The electrical conductivity of solution-processed nanosheet networks

TL;DR: In this article, the authors highlight the central role that the inter-sheet junctions play in determining the electrical characteristics of such networks and propose simple models relating network conductivity and mobility to the junction resistance.
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Engineered MoSe2-based heterostructures for efficient electrochemical hydrogen evolution reaction

TL;DR: In this paper, the authors designed and engineered heterostructures composed of single/few-layer MoSe2 flakes and carbon nanomaterials (graphene or single-wall carbon nanotubes (SWNTs)) produced by solution processing.
Journal Article

Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and their Mono-Layer Limit

TL;DR: This work systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit, to establish a solid basis to understand the underlying valley physics of these materials.
References
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Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.

TL;DR: An efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set is presented and the application of Pulay's DIIS method to the iterative diagonalization of large matrices will be discussed.
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Projector augmented-wave method

TL;DR: An approach for electronic structure calculations is described that generalizes both the pseudopotential method and the linear augmented-plane-wave (LAPW) method in a natural way and can be used to treat first-row and transition-metal elements with affordable effort and provides access to the full wave function.
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Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Single-layer MoS2 transistors

TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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