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Enhanced catalytic activity in strained chemically exfoliated WS 2 nanosheets for hydrogen evolution

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TLDR
Analyses indicate that the enhanced electrocatalytic activity of WS₂ is associated with the high concentration of the strained metallic 1T (octahedral) phase in the as-exfoliated nanosheets.
Abstract
Efficient evolution of hydrogen via electrocatalysis at low overpotentials is promising for clean energy production. Monolayered nanosheets of chemically exfoliated WS2 are shown to be efficient catalysts for hydrogen evolution at very low overpotentials. The enhanced catalytic performance is associated with the high concentration of the strained metallic octahedral phase in the exfoliated nanosheets.

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Journal ArticleDOI

Ultrafine CoP Nanoparticles Supported on Carbon Nanotubes as Highly Active Electrocatalyst for Both Oxygen and Hydrogen Evolution in Basic Media

TL;DR: It is reported that CoP nanoparticles (NPs) can act as a bifunctional catalyst for both HER and OER, and the noble-metal-free catalyst also shows good activity and duarability for HER under the same basic condition.
Journal ArticleDOI

NiS2 nanosheets array grown on carbon cloth as an efficient 3D hydrogen evolution cathode

TL;DR: In this article, the NiS2 nanosheets array on carbon cloth (NiS2 NA/CC) via sulfidization of its Ni(OH)2 NE/CC precursor was demonstrated.

(Invited) Contributions of Phase, Sulfur Vacancies, and Edges to the Hydrogen Evolution Reaction Catalytic Activity of Porous Molybdenum Disulfide Nanosheets

TL;DR: Using novel porous (holey) metallic 1T phase MoS2 nanosheets synthesized by a liquid-ammonia-assisted lithiation route, this study systematically investigated the contributions of crystal structure, edges, and sulfur vacancies to the catalytic activity toward HER and revealed that the phase serves as the key role in determining the HER performance.
Journal ArticleDOI

Thermal stability of WS2 flakes and gas sensing properties of WS2/WO3 composite to H2, NH3 and NO2

TL;DR: In this article, the morphological, structural, chemical, and electrical characterization of WS2 thin films sensors were reported by drop casting a commercial solution of dispersed few-layer WS2 flakes on Si3N4 interdigitated substrates and annealing the films in air at 150°C, 250°C and 350°C.
Journal ArticleDOI

Preparation of Gallium Sulfide Nanosheets by Liquid Exfoliation and Their Application As Hydrogen Evolution Catalysts

TL;DR: In this paper, the authors demonstrate the production of large quantities of gallium sulfide (GaS) nanosheets by liquid exfoliation of layered GaS powder, achieved by sonication of the powder in suitable solvents.
References
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Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.

TL;DR: An efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set is presented and the application of Pulay's DIIS method to the iterative diagonalization of large matrices will be discussed.
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Projector augmented-wave method

TL;DR: An approach for electronic structure calculations is described that generalizes both the pseudopotential method and the linear augmented-plane-wave (LAPW) method in a natural way and can be used to treat first-row and transition-metal elements with affordable effort and provides access to the full wave function.
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Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Single-layer MoS2 transistors

TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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