Journal ArticleDOI
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
Basanta Roul,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,Mahesh Kumar,A. T. Kalghatgi,S. B. Krupanidhi,Nitesh Kumar,A. Sundaresan +7 more
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TLDR
In this article, the authors have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior.Abstract:
We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm−1 in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.read more
Citations
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Self‐Supporting GaN Nanowires/Graphite Paper: Novel High‐Performance Flexible Supercapacitor Electrodes
TL;DR: These findings demonstrate that the GaN/GP composite electrode has significant potential as a candidate for the flexible energy storage devices.
Journal ArticleDOI
Review—The Current and Emerging Applications of the III-Nitrides
Chuanle Zhou,Amirhossein Ghods,Vishal Saravade,Paresh V. Patel,Kelcy L. Yunghans,Cameron Ferguson,Yining Feng,Bahadir Kucukgok,Na Lu,Ian T. Ferguson +9 more
TL;DR: In this article, the authors review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection.
Journal ArticleDOI
Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al
Andrzej Taube,Eliana Kamińska,Maciej Kozubal,Jakub Kaczmarski,Wojciech Wojtasiak,Jakub Jasiński,Michał A. Borysiewicz,M. Ekielski,M. Juchniewicz,Jakub Grochowski,Marcin Myśliwiec,Elżbieta Dynowska,Adam Barcz,Pawel Prystawko,M. Zając,Robert Kucharski,Anna Piotrowska +16 more
TL;DR: In this paper, the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistors (HEMTs) using Al and C ion implantation is described.
Journal ArticleDOI
Can cation vacancy defects induce room temperature ferromagnetism in GaN
TL;DR: In this article, the largest value of J0 is only 33 µV at the gallium vacancy (VGaN) density of 128 µV × 1021 cm−3, corresponding to a Curie temperature of 150 µV.
Journal ArticleDOI
Surface defects decorated zinc doped gallium oxynitride nanowires with high photocatalytic activity
TL;DR: In this article, the surface defect is tuned by varying the ammonification temperature carefully, resulting in controlled doping content as well as adjustable crystallinity in the nanowire, which exhibits high photocatalytic activity and very good stability for the degradation of Rhodamine B organic dye.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI
Electrical spin injection in a ferromagnetic semiconductor heterostructure
TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.
Journal ArticleDOI
Thin films: unexpected magnetism in a dielectric oxide.
TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films
TL;DR: In this article, the magnetic moment was observed in undoped semiconducting or insulating oxides to become ferromagnetic at room temperature on MgO substrates, where the magnetic field was applied parallel to the film plane.
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