Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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An ab-initio perspective on the electronic and optical characteristics of MoSe2 nanosheet: Role of external electric field
TL;DR: In this article , the authors examined the change of the band gap, the optical absorption coefficient (OAC), the refractive index (RI), and the optical conductivity of a monolayer MoSe2 (ML) with respect to the variation in the external electric field strength.
Journal ArticleDOI
Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2
Andrii Kozak,M. Sojková,F. Gucmann,Michal Bodík,Karol Vegso,Edmund Dobročka,Igor Píš,Federica Bondino,Martin Hulman,Peter Siffalovic,M. Ťapajna +10 more
TL;DR: In this article , a comparative analysis of nanoscale tribological properties of ultra-thin highly-ordered PtSe2 layers deposited on the sapphire substrates with the in-plane and out-of-plane crystallographic orientation of the c-axis flakes was performed.
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