Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate
Bhim Chamlagain,Qing Li,Nirmal Ghimire,Nirmal Ghimire,Hsun-Jen Chuang,Meeghage Madusanka Perera,Honggen Tu,Yong Xu,Minghu Pan,Di Xaio,Jiaqiang Yan,Jiaqiang Yan,David Mandrus,David Mandrus,Zhixian Zhou +14 more
TL;DR: In this article, low-temperature scanning tunneling microscopy characterization of MoSe2 crystals and the fabrication and electrical characterization of field effect transistors on both SiO2 and parylene-C substrates were reported.
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Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.
Anupam Roy,Hema C. P. Movva,Biswarup Satpati,Kyounghwan Kim,Rik Dey,Amritesh Rai,Tanmoy Pramanik,Samaresh Guchhait,Emanuel Tutuc,Sanjay K. Banerjee +9 more
TL;DR: Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.
Journal ArticleDOI
Pulsed laser-deposited MoS₂ thin films on W and Si: field emission and photoresponse studies.
Dattatray J. Late,Parvez A. Shaikh,Ruchita T. Khare,Ranjit V. Kashid,Minakshi Chaudhary,Mahendra A. More,Satishchandra Ogale +6 more
TL;DR: Field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.
Journal ArticleDOI
Synthetic approaches to two-dimensional transition metal dichalcogenide nanosheets
TL;DR: In this paper, a review of all synthetic methods to 2D transition metal dichalcogenides (TMDCs) is presented by considering the quality and characteristics of the nanosheets produced.
Journal ArticleDOI
High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors.
TL;DR: The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance.
References
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