Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Reads0
Chats0
TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
More filters
Journal ArticleDOI
Observation of Switchable Photoresponse of a Monolayer WSe2-MoS2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging.
Young-Woo Son,Ming-Yang Li,Ming-Yang Li,Chia Chin Cheng,Kung-Hwa Wei,Pingwei Liu,Qing Hua Wang,Lain-Jong Li,Michael S. Strano +8 more
TL;DR: This work uses photocurrent spectral atomic force microscopy to image the current and photocurrent generated between a biased PtIr tip and a monolayer WSe2-MoS2 lateral heterostructure, and shows high spatial frequency variations in substrate/ MoS2 contact that exceed the frequencies imposed by the underlying substrates.
Journal ArticleDOI
High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
TL;DR: In this paper, high performance p-and n-type WSe2 field effect transistors (FETs) can be realized by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness.
Journal ArticleDOI
Monolayer tellurene–metal contacts
Jiahuan Yan,Xiuying Zhang,Yuanyuan Pan,Jingzhen Li,Bowen Shi,Shiqi Liu,Jie Yang,Zhigang Song,Han Zhang,Meng Ye,Ruge Quhe,Yangyang Wang,Jinbo Yang,Feng Pan,Jing Lu +14 more
TL;DR: In this article, the interfacial characteristics of monolayer (ML) tellurene field effect transistors with a series of common bulk metals and 2D graphene as electrodes were comprehensively examined.
Journal ArticleDOI
Imperfect two-dimensional topological insulator field-effect transistors
TL;DR: Two-dimensional topological insulator field-effect transistors that switch based on the modulation of scattering are proposed that can be made enabling high-performance and low-power electronic circuits using imperfect two-dimensionalTopological insulators.
Journal ArticleDOI
Interfacial Properties of Monolayer MoSe2–Metal Contacts
Yuanyuan Pan,Sibai Li,Meng Ye,Ruge Quhe,Ruge Quhe,Zhigang Song,Zhigang Song,Yangyang Wang,Jiaxin Zheng,Feng Pan,Wanlin Guo,Jinbo Yang,Jing Lu +12 more
TL;DR: Using ab initio energy band calculations and more reliable ab-in-time quantum transport simulations, this paper studied the interfacial properties of ML MoSe2-metal interfaces (metals = Al, Ag, Pt, Cr, Ni, and Ti).
References
More filters
Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
J.A. Wilson,A.D. Yoffe +1 more
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
Journal ArticleDOI
Intrinsic and extrinsic performance limits of graphene devices on SiO2.
TL;DR: It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.