Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Reads0
Chats0
TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
More filters
Journal ArticleDOI
Two-dimensional semiconductors for transistors
TL;DR: In this article, a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FET in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene.
Journal ArticleDOI
Tunable Transport Gap in Phosphorene
TL;DR: It is experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer, and the asymmetry of the electron and the hole current was found to be dependent on the layer thickness.
Journal ArticleDOI
Chemical vapor deposition growth of crystalline monolayer MoSe2.
Xingli Wang,Yongji Gong,Gang Shi,Wai Leong Chow,Kunttal Keyshar,Gonglan Ye,Robert Vajtai,Jun Lou,Zheng Liu,Emilie Ringe,Beng Kang Tay,Pulickel M. Ajayan +11 more
TL;DR: This work demonstrates the chemical vapor deposition (CVD) growth of uniform MoSe2 monolayers under ambient pressure, resulting in large single crystalline islands, and shows n-type channel behavior with average mobility much higher than the 4-20 cm(2) V(-1) s-1 reported for vapor phase grown MoS2.
Journal ArticleDOI
Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Lingming Yang,Kausik Majumdar,Han Liu,Yuchen Du,Heng Wu,Michael Hatzistergos,P. Y. Hung,Robert Tieckelmann,Wilman Tsai,Chris Hobbs,Peide D. Ye +10 more
TL;DR: A chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2, paving the way for high-performance 2D nanoelectronic devices.
Journal ArticleDOI
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Zhihao Yu,Yiming Pan,Yuting Shen,Zilu Wang,Zhun-Yong Ong,Tao Xu,Run Xin,Lijia Pan,Baigeng Wang,Litao Sun,Jinlan Wang,Gang Zhang,Yong-Wei Zhang,Yi Shi,Xinran Wang +14 more
TL;DR: A facile low-temperature thiol chemistry route is developed to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps, providing a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.
References
More filters
Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
J.A. Wilson,A.D. Yoffe +1 more
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
Journal ArticleDOI
Intrinsic and extrinsic performance limits of graphene devices on SiO2.
TL;DR: It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.