Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Reads0
Chats0
TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
More filters
Journal ArticleDOI
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
TL;DR: By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
Journal ArticleDOI
Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati,Zhong Lin,Vincent Meunier,Vincent Meunier,Yeonwoong Jung,Jangho J Cha,Saptarshi Das,Di Xiao,Young-Woo Son,Michael S. Strano,Valentino R. Cooper,Liangbo Liang,Liangbo Liang,Steven G. Louie,Steven G. Louie,Emilie Ringe,Wenchao Zhou,Steve S. Kim,Rajesh R. Naik,Bobby G. Sumpter,Humberto Terrones,Humberto Terrones,Fengnian Xia,Yeliang Wang,Jian Zhu,Deji Akinwande,Nasim Alem,Jon A. Schuller,Raymond E. Schaak,Mauricio Terrones,Joshua A. Robinson +30 more
TL;DR: Insight is provided into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies.
Journal ArticleDOI
Two-dimensional flexible nanoelectronics.
TL;DR: With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.
Journal ArticleDOI
Mobility engineering and metal-insulator transition in monolayer MoS2
TL;DR: In this article, the authors report on electrical transport measurements on MoS2 FETs in different dielectric configurations and show clear evidence of the strong suppression of charge impurity scattering in dual-gate devices with a top-gate Dielectric together with phonon scattering that shows a weaker than expected temperature dependence.
Journal ArticleDOI
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
Yi Zhang,Tay-Rong Chang,Bo Zhou,Yong-Tao Cui,Hao Yan,Hao Yan,Zhongkai Liu,Zhongkai Liu,F. Schmitt,F. Schmitt,James J. Lee,James J. Lee,Robert G. Moore,Robert G. Moore,Yulin Chen,Yulin Chen,Yulin Chen,Hsin Lin,Horng-Tay Jeng,Sung-Kwan Mo,Zahid Hussain,Arun Bansil,Zhi-Xun Shen,Zhi-Xun Shen +23 more
TL;DR: The first direct observation of the transition from indirect to direct bandgap in monolayer samples is reported by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy.
References
More filters
Journal ArticleDOI
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
Hui Fang,Steven Chuang,Steven Chuang,Ting Chia Chang,Kuniharu Takei,Kuniharu Takei,Toshitake Takahashi,Toshitake Takahashi,Ali Javey,Ali Javey +9 more
TL;DR: High performance p-type field-effect transistors based on single layered WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics are reported.
Journal ArticleDOI
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang,Lili Yu,Yi-Hsien Lee,Yi-Hsien Lee,Yumeng Shi,Allen Hsu,Matthew L. Chin,Lain-Jong Li,Madan Dubey,Jing Kong,Tomas Palacios +10 more
TL;DR: This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology based on the semiconducting nature of molybdenum disulfide.
Journal ArticleDOI
Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
Hai Li,Zongyou Yin,Qiyuan He,Hong Li,Xiao Huang,Gang Lu,Derrick Wen Hui Fam,Alfred Iing Yoong Tok,Qing Zhang,Hua Zhang +9 more
TL;DR: Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable, and these FET devices can be used as gas sensors to detect nitrous oxide.
Journal ArticleDOI
MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
Hee Sung Lee,Sung Wook Min,Youn Gyung Chang,Min Kyu Park,Taewook Nam,Hyungjun Kim,Jae Hoon Kim,Sunmin Ryu,Seongil Im +8 more
TL;DR: The fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection.
Journal ArticleDOI
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
TL;DR: This report reports on the first integrated circuit based on a two-dimensional semiconductor MoS(2) transistors, capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits.