Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
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References
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MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
Han Liu,Peide D. Ye +1 more
TL;DR: In this paper, the authors demonstrate atomic layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectrics.
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TL;DR: Using an optical imaging method combined with image analysis software, a high-contrast image of the MoS₂ sheets can be extracted from the red (R) channel of the color optical microscopy image.
Journal ArticleDOI
Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Wan Sik Hwang,Maja Remškar,Rusen Yan,Vladimir Protasenko,Kristof Tahy,Soo Doo Chae,Pei Zhao,Aniruddha Konar,Huili,Xing,Alan Seabaugh,Debdeep Jena +11 more
TL;DR: In this paper, the authors reported the realization of field effect transistors (FETs) made with chemically synthesized layered two dimensional (2D) crystal semiconductor WS2, which demonstrated ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation.
Journal ArticleDOI
Mobility of Charge Carriers in Semiconducting Layer Structures
TL;DR: In this paper, a short-range interaction is discussed which couples the charge carriers in highly anisotropic layer structures to the nonpolar optical lattice modes, and the relatively low room-temperature mobilities as well as the high values of the exponents $n$ are explained in terms of the proposed interaction.
Journal ArticleDOI
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
Wan Sik Hwang,Maja Remškar,Rusen Yan,Vladimir Protasenko,Kristof Tahy,Soo Doo Chae,Pei Zhao,Aniruddha Konar,Huili Xing,Alan Seabaugh,Debdeep Jena +10 more
TL;DR: In this article, the authors reported the realization of field effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2, which demonstrated ambipolar behavior and a high (∼105×) on/off current ratio at room temperature with current saturation.