Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Journal ArticleDOI
Thermoelectric Response of Bulk and Monolayer MoSe2 and WSe2
TL;DR: In this article, the thermoelectric properties of bulk and monolayer MoSe2 and WSe2 were investigated using first-principles calculations and Boltzmann transport theory.
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Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
Mahito Yamamoto,Sheng Tsung Wang,Mei-Yan Ni,Mei-Yan Ni,Yen-Fu Lin,Yen-Fu Lin,Song-Lin Li,Shinya Aikawa,Wen-Bin Jian,Keiji Ueno,Katsunori Wakabayashi,Kazuhito Tsukagoshi +11 more
TL;DR: The observations point to strong effects of dimensionality on the phonon properties of MoTe2, which shows a prominent peak of the in-plane E(1)2g mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides.
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Synthesis, properties, and optoelectronic applications of two-dimensional MoS2 and MoS2-based heterostructures.
TL;DR: Recent progress in the synthesis, properties and applications of MoS2 and related heterostructures are reviewed, including their novel properties and functionalities as well as emerging applications, especially in the areas of light energy harvesting or conversion.
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Photonics and optoelectronics of two-dimensional materials beyond graphene.
Joice Sophia Ponraj,Zai-Quan Xu,Sathish Chander Dhanabalan,Sathish Chander Dhanabalan,Haoran Mu,Yusheng Wang,Jian Yuan,Pengfei Li,Siddharatha Thakur,Mursal Ashrafi,Kenneth McCoubrey,Yupeng Zhang,Shaojuan Li,Han Zhang,Qiaoliang Bao,Qiaoliang Bao +15 more
TL;DR: This review of the recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed.
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Humidity Sensing and Photodetection Behavior of Electrochemically Exfoliated Atomically Thin-Layered Black Phosphorus Nanosheets.
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