Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS 2 Transistors
TL;DR: In this article, the effect of high-k dielectric-mediated doping on key device metrics including contact resistance and carrier mobility was examined, and it was shown that the reduction in contact resistance with an increase in doping is due to the doping-induced lowering of the Schottky barrier height (SBH) at the metal-semiconductor interface.
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Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors
TL;DR: It is demonstrated that the Schottky barrier can be effectively tuned via the application of vertical compressive pressure, an external electrical field and tensile strain and further proves the highly transparent contacts and promising application potential in field-effect transistors (FET).
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Anisotropic effects in the Raman scattering of Re-doped 2H-MoSe2 layered semiconductors
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Torbjörn Björkman,Viera Skakalova,Simon Kurasch,Ute Kaiser,Jannik C. Meyer,Jurgen H. Smet,Arkady V. Krasheninnikov +6 more
TL;DR: Using a combination of Raman spectroscopy and density functional theory calculations, the vibrational properties of two-dimensional silica (2D-SiO2), which has a kagome lattice structure, are studied and it is shown that, at finite temperatures, the stability of 2D- SiO2 lattice is strongly influenced by phonon–phonon interaction.
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A computational study of monolayer hexagonal WTe2 to metal interfaces
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References
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