Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Quantitative analysis of temperature-dependent vibrational properties of Cobalt incorporated WSe2 ternary alloy
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TL;DR: In this paper , a detailed analysis of temperature and laser power-dependent Raman spectra of Co incorporated WSe2 crystals is presented, where the thermal expansion coefficients of these multilayer crystals have been deduced for the first time.
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First-principal insight of the gold-metal interaction to bilayer MoSe2 of AB and AA stacking order
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References
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Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
J.A. Wilson,A.D. Yoffe +1 more
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
Journal ArticleDOI
Intrinsic and extrinsic performance limits of graphene devices on SiO2.
TL;DR: It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.