Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Efficient hydrogen production at a rationally designed MoSe2@Co3O4 p-n heterojunction
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Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer
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TL;DR: High performance photodetectors based on two-dimensional transition-metal dichalcogenides have been achieved with a broad photoresponse spectrum and quick response and with the intrinsic huge electric field derived from the polarization of ferroelectric polymer gating, a low dark current can be achieved without additional gate bias.
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TL;DR: In order to obtain effective switching and low OFF state power consumption, two-dimensional semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of the carriers in the semiconductor.
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Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
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TL;DR: In this article, the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale was reported.
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