Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Journal ArticleDOI
Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices
Fionán Davitt,Hugh G. Manning,Fred Robinson,Samantha L. Hawken,Subhajit Biswas,Nikolay Petkov,Maart van Druenen,John J. Boland,Gillian Reid,Justin D. Holmes +9 more
TL;DR: In this paper, the potential of resistive memory devices in resistive memories has been investigated using crystallographically controlled synthesis of SnSe nanowires, which has been published in final form at 10.1002/admi.202000474.
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Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2
Lei Yin,Lei Yin,Kai Xu,Kai Xu,Yao Wen,Yao Wen,Zhenxing Wang,Yun Huang,Yun Huang,Feng Wang,Feng Wang,Tofik Ahmed Shifa,Tofik Ahmed Shifa,Ruiqing Cheng,Ruiqing Cheng,He Ma,Jun He +16 more
TL;DR: In this paper, the authors demonstrate ultrafast and ultrasensitive back-gated HfSe2 phototransistors with a high on/off ratio of 106 and modest mobilities in the range of 2.6-6.5 cm2 V−1 s−1.
Journal ArticleDOI
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
Lu Ma,Digbijoy N. Nath,Edwin W. Lee,Choong Hee Lee,Mingzhe Yu,Aaron R. Arehart,Siddharth Rajan,Yiying Wu +7 more
TL;DR: In this article, the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale was reported.
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Photodetectors based on junctions of two-dimensional transition metal dichalcogenides*
TL;DR: In this paper, transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications in applications of photodetection, and they have shown many exciting possibilities to combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together.
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High-Performance Sensing Behavior Using Electronic Ink of 2D SnSe2 Nanosheets
TL;DR: In this paper, a few layer thick SnSe2 nanosheets ink using liquid exfoliation method was synthesized using liquid extraction method and the morphology, thickness / layering and elemental analysis of the sheets were characterized by using SEM, TEM, AFM, Raman spectroscopy and XPS.
References
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