Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
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TLDR
In this paper, the authors report the fabrication of back-gated field effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes.Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.read more
Citations
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Giant photoluminescence enhancement in MoSe2 monolayers treated with oleic acid ligands
Arelo Tanoh,Jack A. Alexander-Webber,Ye Fan,Nicholas Gauriot,James Xiao,Raj Pandya,Zhaojun Li,Stephan Hofmann,Akshay Rao +8 more
TL;DR: It is demonstrated that treatment with oleic acid (OA) provides a simple wet chemical passivation method for monolayer MoSe2, enhancing PL yields by an average of 58-fold, while also improving spectral uniformity across the material and reducing the emission linewidth.
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Electron and thermal transport via variable range hopping in MoSe2 single crystals
Dhavala Suri,R. S. Patel +1 more
TL;DR: In this paper, the authors performed resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature and found that large magnitude of resistivity in the CPP mode indicates strong structural anisotropy.
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Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation
Shengxia Zhang,J. Liu,Jianming Zeng,P P Hu,Khan Maaz,Liqiang Xu,J L Duan,P F Zhai,Zhengdong Li,Liu Liu +9 more
TL;DR: In this article, the impact of the latent tracks on electronic transport behavior in transition metal dichalcogenides (TMDC) channel field effect transistors (FETs) was analyzed in detail.
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Exploring a high-carrier-mobility black phosphorus/MoSe2 heterostructure for high-efficiency thin film solar cells
TL;DR: In this paper , the authors proposed interface-engineered two-dimensional van der Waals heterostructure composed of high-carrier-mobility black phosphorus (BP) layer and MoSe2 layer.
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Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors
TL;DR: In this article, the effects of biaxial strain on the direct-current (DC) performance of transition-metal dichalcogenide (TMD)-based double-gate field effect transistors (DGFETs) were investigated.
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